Home

Person

Jean-Michel Sallese

About
Privacy
Disclaimer

Graph Chatbot

Related publications (155)

Comparative Study on the Performance of Five Different Hall Effect Devices

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-r ...

Mdpi Ag2013

Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel

Jean-Michel Sallese, Lucian Barbut, Farzan Jazaeri

We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Offset And Drift Analysis Of The Hall Effect Sensors. The Geometrical Parameters Influence

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Several Hall sensor configurations have been integrated in CMOS 0.35 mu m technology and analyzed in terms of offset at room temperature and offset drift. We searched for the best geometry that would minimize the offset and its corresponding drift. The tar ...

Inst Materials Physics2012

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...

Institute of Electrical and Electronics Engineers2012

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Christophe Lallement, Jean-Michel Sallese

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

2012

Temperature Influence Investigation on Hall Effect Sensors Performance Using a Lumped Circuit Model

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated c ...

IEEE2012

Size-selective diffusion in nanoporous alumina membranes for a glucose affinity sensor

Jean-Michel Sallese, Peter Ryser, Eric Meurville, Christophe Boss

The retention, diffusion and structural properties of 2–4 nm nanoporous alumina membranes were investigated in view of their integration as size-selective interface in a glucose sensor. These membranes exhibit remarkable glucose diffusion properties with o ...

Elsevier2012

RF Compact Modeling of High-voltage MOSFETs

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of ...

Medknow Publications2012

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Didier Bouvet, Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Elsevier2012

Geometrical parameters influence on the Hall effect sensors offset and drift

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Several Hall sensor configurations have been integrated in CMOS technology and analyzed in terms of offset at room temperature and offset drift. We looked for the best geometry that would minimize the offset and its drift. The targeted specification was 30 ...

IEEE2011

Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology

Didier Bouvet, Jean-Michel Sallese, Lucian Barbut

This paper proposes a CMOS based process for Vertical Slit Field Effect Transistors. The central part of the device, namely, the vertical slit, is defined by using electron beam lithography and silicon dry etching. In order to verify the validity and the r ...

IEEE2011

Physics-based compact model for ultra-scaled FinFETs

Christophe Lallement, Jean-Michel Sallese, Ashkhen Yesayan

A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), ...

2011

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Christophe Lallement, Jean-Michel Sallese

We derived an analytical model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) device, the principle of which has been recently demonstrated. Despite some similarities with classical junction-based DG MOSFETs, ...

2011

Meshing strategy of equivalent substrate schematic in SMART power IC

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier pro ...

IEEE2011

Towards circuit design using VeSFETs

Maher Kayal, François Krummenacher, Jean-Michel Sallese, Marc Pastre, Lucian Barbut

This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process var ...

2011

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Matthias Bucher, François Krummenacher, Jean-Michel Sallese, Antonios Bazigos

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

A viscosity-dependent affinity sensor for continuous monitoring of glucose in biological fluids

Jean-Michel Sallese, Peter Ryser, Eric Meurville, Christophe Boss

We present a viscometric affinity biosensor for continuous monitoring of glucose in biological fluids such as blood and plasma. The sensing principle of this chemico-mechanical sensor is based upon the viscosity variation of a sensitive fluid with glucose ...

Elsevier2011

Hall effect sensors performance investigation using three-dimensional simulations

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows var ...

2011

Circuit Level Modeling Methodology of Parasitic Substrate Current Injection from a High-Voltage H-bridge at High Temperature

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

In this paper, a modeling methodology is validated based on an enhanced model of the diode, that we have developed to simulate substrate current coupling mechanisms on a typical H -bridge structure. An equivalent schematic based on an enhanced model of the ...

2011

Geometry influence on the Hall effect devices performance

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

The influence of the geometry, via the ratio L/W of the Hall cells and the geometrical correction factor G on several figures of merit regarding Hall sensors is analyzed, namely the sensitivity, Hall Voltage and power dissipated within the device. Experime ...

2010

Page 6 of 8