Publications by Jean-Michel Sallese

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This article presents an analytical model of the barrier layer in GaN-MISHEMT that predicts a limitation of the channel charge density that is expected to reach an asymptotic value under high gate voltages, a feature that was not reported before. We find that this behavior is very sensitive to the device parameters such as the AlGaN barrier thickness, composition, and polarization-induced charge density. Explicit relationships for charge saturation in the quantum well (QW) are proposed and can be used to op

In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOI MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has a sensitivity of 3 mW/m2 and a resolution of about 7 bits. This pixel can be operated in two m

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows var ...

In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate ...

In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating ...

The design, fabrication and testing of a low-cost portable medical device for the detection and quantification of exosomes is presented in this paper. The portable medical device comprises a sensor array that can detect the presence of exosomes and quantif ...

This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The m ...

This paper presents a high precision capacitive moisture sensor for polymers that is part of a compact, fast, and economic moisture analyzer capable of reaching similar precision than commercial moisture analyzers based on the Karl Fischer method. The desi ...

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of ...

We derived an analytical model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) device, the principle of which has been recently demonstrated. Despite some similarities with classical junction-based DG MOSFETs, ...

The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance a ...

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down t ...

In this work, we present the technological constrains and limitations in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space involving the intrinsic off-current, the sub-threshold swing, and the drai ...

We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. Acco ...

Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the so-called junctionless (JL) device. However, in contrast with the state-of-the ...

Jean-Michel Sallese

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Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT

SOI digital pixel sensor based on charge pumping

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Hall effect sensors performance investigation using three-dimensional simulations

Charge-based modeling of field effect transistors, Make it easy

SOI digital pixel sensor based on charge pumping

Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes

Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Compact Analytical Model of Nanowire Junctionless ISFET

High Precision Capacitive Moisture Sensor for Polymers

FOSS EKV 2.6 parameter extractor

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

Explicit Compact Model for Ultranarrow Body FinFETs

Design Space of Twin Gate Junctionless Vertical Slit Field Effect Transistors

Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges