Publication

Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT

Jean-Michel Sallese
2025

Abstract

This article presents an analytical model of the barrier layer in GaN-MISHEMT that predicts a limitation of the channel charge density that is expected to reach an asymptotic value under high gate voltages, a feature that was not reported before. We find that this behavior is very sensitive to the device parameters such as the AlGaN barrier thickness, composition, and polarization-induced charge density. Explicit relationships for charge saturation in the quantum well (QW) are proposed and can be used to optimize GaN-MISHEMT architectures.

Official source

https://infoscience.epfl.ch/entities/publication/d41ee888-bfb7-4edf-b47f-c55572652180

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Jean-Michel Sallese
2025

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/d41ee888-bfb7-4edf-b47f-c55572652180

About this result

Related concepts (30)

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

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Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT

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