Publication

Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut
2013
Journal Articles

Abstract

We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. According to this work, a complete intrinsic capacitance network is obtained, which represents an essential step towards AC analysis of circuits based on junctionless devices.

Official source

https://infoscience.epfl.ch/entities/publication/a546f731-9b49-4b32-89f0-ec7ce70c26f8

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

Chat with Graph Search

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Tool Developments in the OpenMC Code: Correlated Sampling and Transient Fission Matrix Approach Coupled to OpenFOAM