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In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate for general purposes of compact modeling.
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca
Majed Chergui, Giulia Fulvia Mancini, Michele Puppin, Ludmila Maria Diniz Leroy, Hui-Yuan Chen, Rolf Baldwin Versteeg