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Jean-Michel Sallese

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Related publications (150)

Page 5 of 8

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...

IEEE2019

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Mihai Adrian Ionescu, Jean-Michel Sallese, Mohammad Najmzadeh, Wladyslaw Grabinski, Matthieu Berthomé

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...

Institute of Electrical and Electronics Engineers2012

Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate for upgrade of the electronics of particle detectors at CERN. Despite the robustness of this node to ultrahigh levels of total ionizing dose has been proven, the capability to withstand 1016 1 ...

Institute of Electrical and Electronics Engineers Inc.2023

Meshing strategy of equivalent substrate schematic in SMART power IC

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier pro ...

IEEE2011

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Novel chemico-mechanical approach towards long-term implantable glucose sensing

Jean-Michel Sallese, Peter Ryser, Eric Meurville, Christophe Boss

The proof of concept of a continuously sensing affinity device based on the glucose-dependent viscosity of a sensitive solution containing dextran and Concanavalin A has been successfully demonstrated. The biosensor incorporates a piezoelectric diaphragm a ...

Elsevier2009

High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino, Rosane Moura Dos Santos Barrettino

In this work a high precision capacitive moisture sensor for polymers was designed and fabricated. The device is part of a compact, fast, and economic moisture analyzer capable of reaching a similar precision than commercial moisture analyzers based on the ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Analysis of Substrate Currents Propagation in HVCMOS technology

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi ...

IEEE2016

Measurement and Performance Evaluation of a Silicon On Insulator Pixel Matrix

Maher Kayal, Jean-Michel Sallese

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photogenerated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabr ...

2010

Active Guard Ring Characterization for Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The ...

Ieee2016

Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

Jean-Michel Sallese

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...

IEEE2016

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Christian Enz, Jean-Michel Sallese, François Krummenacher, Matthias Bucher, Wladyslaw Grabinski, Eric Vittoz

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Hall effect sensors performance investigation using three-dimensional simulations

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows var ...

2011

Charge-based modeling of field effect transistors, Make it easy

Jean-Michel Sallese

In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate ...

IEEE2021

SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese

In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes

Jean-Michel Sallese

The design, fabrication and testing of a low-cost portable medical device for the detection and quantification of exosomes is presented in this paper. The portable medical device comprises a sensor array that can detect the presence of exosomes and quantif ...

IEEE2023

Cover Picture: Materials and Corrosion. 1/2025

Jean-Michel Sallese, Stefano Mischler, Christian Leinenbach, Anna Neus Igual Muñoz, Meet Jaydeepkumar Oza, Pranav Vivek Kulkarni

Wiley2025

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Christian Enz, Jean-Michel Sallese, Ananda Sankar Roy

2006