Publications by Jean-Michel Sallese

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A new methodology for modeling minority carriers diffusion in Smart Power ICs substrate using standard circuit simulators has been proposed by EPFL. For this purpose, a parasitic substrate network consisting of lumped elements is extracted from the circuit ...

This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process var ...

The influence of the geometry, via the ratio L/W of the Hall cells and the geometrical correction factor G on several figures of merit regarding Hall sensors is analyzed, namely the sensitivity, Hall Voltage and power dissipated within the device. Experime ...

In response to the 2013 Update of the European Strategy for Particle Physics (EPPSU), the Future Circular Collider (FCC) study was launched as a world-wide international collaboration hosted by CERN. The FCC study covered an energy-frontier hadron collider ...

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8×8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with results of its implementation on the fabricated pixel matrix. The results show the applicability of the c

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only starts to decrease when the top barrier thickness falls below 1.5 nm, indicating that radiative recombinations in the islands are very efficient. These results are well understood by a model assuming a vacuum confinement energy close to 5 eV. (C) 1997 American

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...

The 28 nm CMOS technology was selected as a promising candidate for upgrade of the electronics of particle detectors at CERN. Despite the robustness of this node to ultrahigh levels of total ionizing dose has been proven, the capability to withstand 1016 1 ...

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral ...

The proof of concept of a continuously sensing affinity device based on the glucose-dependent viscosity of a sensitive solution containing dextran and Concanavalin A has been successfully demonstrated. The biosensor incorporates a piezoelectric diaphragm a ...

In this work a high precision capacitive moisture sensor for polymers was designed and fabricated. The device is part of a compact, fast, and economic moisture analyzer capable of reaching a similar precision than commercial moisture analyzers based on the ...

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi ...

A new technique for driving silicon-on-insulator pixel matrixes has been proposed in [1], which was based on transient charge pumping for evacuating the extra photogenerated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabr ...

In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier pro ...

This paper shows SPICE simulation results of active guard ring structures which are typically employed in Smart Power ICs. Active guard rings act as barriers limiting the flow of minority carriers injected into the substrate toward sensitive circuits. The ...

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...

Jean-Michel Sallese

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Optimization Strategy of Numerical Simulations Applied to EPFL Substrate Model

Towards circuit design using VeSFETs

Geometry influence on the Hall effect devices performance

FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

Measurement and performance evaluation of a silicon on insulator pixel matrix

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells

Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Novel chemico-mechanical approach towards long-term implantable glucose sensing

High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

Charge-Based EPFL HEMT Model

Analysis of Substrate Currents Propagation in HVCMOS technology

Measurement and Performance Evaluation of a Silicon On Insulator Pixel Matrix

Meshing strategy of equivalent substrate schematic in SMART power IC

Active Guard Ring Characterization for Smart Power ICs

Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model