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Jean-François Carlin

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Related publications (180)

Page 6 of 9

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Nicolas Grandjean, Jean-François Carlin

We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

Iop Publishing Ltd2013

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Anna Toschi, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yao Chen

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

AIP Publishing2025

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

Group iii nitride light-emitting devices having a polarization-doped region

Jean-François Carlin

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...

2006

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Raphaël Butté, Jean-Daniel Ganière, Gabriel Christmann, Jacques Levrat, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Julien Dorsaz

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

2005

Selective etching of AlInN/GaN heterostructures for MEMS technology

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems

An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. ...

2007

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Romuald Houdré, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Antonino Francesco Castiglia, Kirill Atlasov, Jacques Levrat, Georg Rossbach, Ulagalandha Perumal Dharanipathy, Noelia Vico Triviño

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

American Institute of Physics2012

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Gediminas Liaugaudas, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gwénolé Jean Jacopin

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Gatien Cosendey, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate thresh ...

2008

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Sylvain Nicolay, Marcel Py, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Ferroelectric gates with rewritable domain nanopatterns for modulation of transport properties in GaN/AlGaN heterostructures

Nava Setter, Jean-François Carlin, Igor Stolichnov, Enrico Colla, Lisa Malin

The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...

AIP2005

Room-temperature polariton lasing in semiconductor microcavities

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, co ...

2007

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

Amer Inst Physics2016

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having too slow thermal emission rates to be detected by other deep level spectroscopy techniques. We will ...

Amer Inst Physics2016

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté

Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 degrees C. The healing processes result in an irreversible transiti ...

Iop Publishing Ltd2024

Phase diagram of a polariton laser from cryogenic to room temperature

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Jacques Levrat

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009