Publication

Chemical Beam Epitaxy of 1.55-Mu-M Separate-Confinement Heterostructure Multiple-Quantum-Well Laser-Diodes

Jean-François Carlin, Alok Rudra, Jean-Michel Sallese, Marc Ilegems, Jean-Daniel Ganière
1995
Journal Articles

Abstract

We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 A/cm(2) are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm(-1).

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https://infoscience.epfl.ch/entities/publication/b08c45a5-4bc0-4781-a3e4-2dd9443334e3

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Jean-François Carlin, Alok Rudra, Jean-Michel Sallese, Marc Ilegems, Jean-Daniel Ganière
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/b08c45a5-4bc0-4781-a3e4-2dd9443334e3

About this result

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