Publication

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey
2008
Journal Articles

Abstract

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.

Official source

https://infoscience.epfl.ch/entities/publication/f851645b-acc7-4142-9910-57b9b0cd2599

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Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

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