Jean-François Carlin

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We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99 %, which makes it a challenge for the crystal growth technique. In this paper we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rate

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. More

The use of photonic crystals (PCs) for realistic light emitting diodes (LEDs) is discussed, given the constraints of planar semiconductor technology. A viable route for the fabrication of high-efficiency high-brightness electrically injected LEDs is presented. The starting point is a top-emitting microcavity using a single Alox Bragg mirror. The active area is surrounded by two-dimensional PCs, namely arrays of air rods etched through the top layers; injection of the electrons is achieved through the crysta

We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transparency current density per well, which equal or even surpass the best published characteristics for 1.55 mu m wavelength lasers based on any material system. Strain relaxation issues do not severely limit the multi-quantum-well design since up to 17 quantum w

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

A vertical-cavity surface-emitting laser with two monolithically grown cavities is presented, The three-terminal device allows current injection into the active regions of both cavities, Under various injection conditions, the device lases continuous wave on either one of the two longitudinal modes supported by the cavity, or on both wavelengths simultaneously. By using a constant injection current in the bottom cavity, and adjusting the current in the top cavity, the device shows all four possible emission

By means of Raman and photoluminescence measurements we have studied the effect of strain and confinement on the optical phonon spectrum of single InAs quantum wells. The frequency region of longitudinal optical phonons confined in both the InAs well and InP barrier layer has been studied. Simple modelling of the effects of the strain and the confinement on the InAs phonon is able to explain the dependence of the phonon frequencies on the layer thickness. Experimental evidence of vibrations localized at the

We report evidence of a large blue shift (up to 70 meV) in the photoluminescence spectra of InAs/InP island like quantum wells following the reduction of the InP top barrier layer thickness from 6 nm to near zero. The photoluminescence intensity only starts to decrease when the top barrier thickness falls below 1.5 nm, indicating that radiative recombinations in the islands are very efficient. These results are well understood by a model assuming a vacuum confinement energy close to 5 eV. (C) 1997 American

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

An etching technology for the patterning of suspended GaN structures on lattice matched AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated, which allows effective pattern transfer without affecting lower layers. ...

Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/In

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and ...

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

In-situ reflectivity measurements of the growth surface during deposition in a Hydride Vapor Phase Epitaxy system are presented. The GaN growth rate increases linearly with the HCl flow and increases monotonically with the ammonia flow. Following the replacement of the carrier gas nitrogen by hydrogen, the growth rate initially increases, passes through a maximum at a H-2 concentration of 0.15 and then decreases.

A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by chemical beam epitaxy. The superfluid-helium temperature PL spectra are characterized by strong excitonic transitions (the excited state n = 2 of the exciton is observed too) from which we have determined the binding energy of the exciton (E(b) = 5.3 meV) and

Jean-François Carlin

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ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Low Threshold 1.55 µm Wavelength InAsP/InGaAsP Strained Multi-Quantum Well Laser Diode Grown by Chemical Beam Epitaxy

High extraction efficiency, laterally injected, light emitting diodes combining microcavities and photonic crystals

InAsP quantum wells for low threshold and high efficiency multi-quantum well laser diodes emitting at 1.55 mu m

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser

Confinement effects on the phonon spectrum of thin InAs/InP strained single quantum wells

Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Selective etching of AlInN/GaN heterostructures for MEMS technology

Thermal Stability of InP-Based Structures for Wafer Fused Laser Diodes

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

In-situ monitoring of GaN growth by hydride vapor phase epitaxy

TEMPERATURE-DEPENDENCE OF THE INP BAND-GAP FROM A PHOTOLUMINESCENCE STUDY