Marc Ilegems

Expertise Solid State Physics, Engineering and Materials Science.Semiconductor-based technologies and devices for electronics and photonics.Nanosciences, micro and nano-technologies, quantum electronics and photonics, microcavities, single photon sources and detectors, physics of low dimensional devices.Infrared and visible lasers for optical communications and displays, light emitting diodes, photonic integrated circuits, photovoltaics, sensors.III-V and III-nitride wide bandgap semiconductor materials, advanced epitaxial growth and processing techniques. Expertise Solid State Physics, Engineering and Materials Science.Semiconductor-based technologies and devices for electronics and photonics.Nanosciences, micro and nano-technologies, quantum electronics and photonics, microcavities, single photon sources and detectors, physics of low dimensional devices.Infrared and visible lasers for optical communications and displays, light emitting diodes, photonic integrated circuits, photovoltaics, sensors.III-V and III-nitride wide bandgap semiconductor materials, advanced epitaxial growth and processing techniques. Marc Ilegems obtained degrees in Electrical Engineering from the University of Brussels in 1965 and a doctorate in Electrical Engineering from Stanford University in 1970. From 1969 to 1977 he was a Member of Technical Staff at the Solid State Electronics Research Laboratory, Bell Laboratories, Murray Hill. He joined the Ecole Polytechnique Federale (Swiss Federal Institute of Technology) in Lausanne in October 1977 as Professor and Director of the new Interdepartmental Institute of Microelectronics (1977-1983) and subsequently as Director of the Institute of Micro- and Optoelectronics (1983-2000) and of the Semiconductor Device Physics Laboratory (1983-2005).Prof. Ilegems served as Dean of the Department of Physics from 1998 to 2000, and as Director of the Swiss National Centre of Competence in Research (NCCR) in Quantum Photonics (2001-2005), the Swiss Priority Program OPTICS (1993-1999) and the Swiss National Program on Micro- and Optoelectronics (1983-90). He is a member of the Scientific Council and has acted as expert and consultant for several national and European research organizations.His current activities include technical and patent consulting for private organizations, contributions to the definition and management of research programs in the framework of bilateral collaborations between Poland, Hungary and Switzerland (2011-2017), and participation as member of various ICT and FET review panels within the Horizon 2020 programme.Prof. Ilegems received an honorary doctorate from the University of Toulouse (1998) and the Heinrich Welker Award from the Compound Semiconductor Symposium (2006) for his contributions to III-V semiconductor materials and device research.The research activities of the Semiconductor Device Physics Laboratory centred on the physics and technology of semiconductor devices. The main subjects of interest included quantum photonics (semiconductor microcavities, light emitting diodes, lasers and detectors), wide bandgap semiconductor nitrides, physics of nano and low-dimensional structures, high electron mobility transistors, crystal growth and materials technology. The research programs were carried out in close collaboration with numerous academic and industrial groups in Switzerland and abroad, in particular within the framework of programs of the European Community.Earlier research topics pursued at Bell Laboratories and at EPFL include Molecular Beam Epitaxy and doping of GaAs and AlGaAs thin films with applications to heterostructure lasers, detectors, and Bragg mirrors, hydride vapor phase epitaxy and physical characterization of GaN on sapphire, liquid-solid phase diagrams of ternary III-V compound systems, and silicon-based non-volatile memory cells.Prof. Ilegems is the author or co-author of over 250 scientific publications (citation index h = 48) and 7 book chapters, and has supervised over 30 doctoral students in Lausanne. His academic contacts include stays as invited professor at Stanford University (1994) and at the Polytechnic University of Madrid (2007).Links:- NCCR Quantum Photonics - http://nccr-qp.epfl.ch/ ResearchDoctoral Thesis Advisor Dorsaz, JulienLattice-matched allnN alloys for nitride-based optoelectronic devices (2006) Joray, Reto Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004)Badilita, Vlad Study of vertical coupled-cavity laser structures (2004)Zellweger, Christoph Realization of GaN-based light emitting devices (2003)Wagner, Volker Growth of GaN by hydride vapor phase epitaxy (2001)Ochoa, Daniel Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001)Brunner, Marcel Design and characterization of single and dual cavity oxide-apertured VCSELs (2000)Royo, Paul Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000)Giovangrandi, Laurent Biopatterning of neural cells on microelectrode arrays (1999)Dill, Christian Fabrication and characterization of high efficiency microcavity light emitting diodes (1999)Gotza, Martin Fabrication and optical characterization of silicon nanowires (1997)Bouvet, Didier Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997)Spicher, Jacques Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996)Beck, Mattias Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996)Haddab, Youcef Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995)Gailhanou, Marc Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995)Oesterle, Ursula Growth and characterization of novel vertical emitting semiconductor structures (1994)Hugi, Johannes Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994)Carlin, Jean-François Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993)Baeta Moreira, Marcus Vinicius Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992)Gueissaz, François Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992)Zirngibl, Martin High speed photodetectors on strained superlattices (1990)Manthey, Jacek Tadeusz Degradation of thin silicon dioxide films and eeprom cells(1990)Acovic, Alexandre Hot electron degradation in short-channel MOS transistors (1989)Théron, Didier Etude de TEGFETs multicanaux (1989)Zimmermann, Piller Beate Modeling of III-V semiconductor devices (1989)Bischoff, Jean-Claude Composants ultra-rapides pour communications optiques (1988)Achtnich, Thomas Martin Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988)Marclay, Etienne Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988)Fazan, Pierre-Christophe Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988)Olcer, Murat Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985)Nottenburg, Richard Norman Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)Patents Liquid phase diffusion technique Marc llegems, Morton B. PanishUnited States Patent US 3,725,149Integrated optical detectorsMarc Ilegems, Louis A. Koszi, Bertram SchwartzUnited States Patent US 4,127,862Buried double heterostructure laser deviceRobert L. Hartman, Marc Ilegems, Louis A. Koszi, Wilfried R. WagnerUnited States Patent US 4,230,997Nonvolatile MOSFET EEPROM cellBühlmann H.J., Olcer M., Ilegems M.Swiss Patent CH 665918-A 1988-19086Electroluminescent device for screen of portable computer or television Ilegems M., Schaer M., Zuppiroli L.European Patent WO 9738558-A; EP 891686-ALattice-matched AlInN/GaN for optoelectronic devicesCarlin J.-F., Ilegems M.United States Patent application US 2007-003697A1 / 2007-21799Selected publications Grandjean N, Ilegems MVisible emission from InGaN/GaN quantum-dot materials and devicesProc. IEEE, vol. 95 (9), pp. 1853-1865 (2007)Butte R, Christmann G, Feltin E, Carlin JF, Mosca M, Ilegems M, Grandjean NRoom-temperature polariton luminescence from a bulk GaN microcavityPhys. Rev. B 73 (3): Art. No. 033315 JAN 2006Feltin E, Carlin JF, Dorsaz J, Christmann G, Butté R, Ilegems M, Grandjean NCrack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applicationsAppl. Phys. Lett. 88 (5): Art. No. 051108 JAN 30 2006Dorsaz J, Buhlmann HJ, Carlin JF, Ilegems MSelective oxidation of AlInN layers for current confinement in III-nitride devicesAppl. Phys. Lett 87 (7): Art. No. 072102 AUG 15 2005Dorsaz J, Carlin JF, Gradecak S, Ilegems M Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode J. Appl. Phys. 97 (8), Art. 084505, 2005 Badilita V, Carlin JF, Ilegems MControl of polarization switching in vertical coupled-cavities surface emitting lasersIEEE Phot. Tech Lett. 16 (2): 365-367 FEB 2004Gradecak S, Stadelmann P, Wagner V, Ilegems M Bending of dislocations in GaN during epitaxial lateral overgrowth Appl. Phys. Lett. 85 (20), 4648-4650, 2004 Carlin JF, Ilegems MHigh-quality AlInN for high index contrast Bragg mirrors lattice matched to GaNAppl. Phys Lett. 83 (4): 668-670 JUL 28 2003Fiore A, Chen JX, Ilegems MScaling quantum-dot light-emitting diodes to submicrometer sizesAppl. Phys. Lett. 81 (10): 1756-1758 SEP 2 2002Chen JX, Markus A, Fiore A, Ilegems MTuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications J. Appl. Phys. 91 (10): 6710-6716, 2002 Wagner V, Parillaud O, Buhlmann HJ, Ilegems MInfluence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxyJ. Appl. Phys. 92 (3): 1307-1316 AUG 1 2002Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U, Ilegems M, Melchior HContinuous wave operation of a mid-infrared semiconductor laser at room temperatureScience 295 (5553): 301-305 JAN 11 2002Brunner M., Gulden K., Hovel R., Moser M., Carlin J. F., Stanley R. P., Ilegems M., Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser, IEEE Photonic Technol. Lett. Vol. 12, pp. 1316-1318, (2000)Carlin J. F., Royo P., Stanley R. P., Houdre R., Spicher J., Oesterle U., Ilegems M. Design and characterization of top-emitting microcavity light- emitting diodes, Semicond. Sci. Technol. Vol. 15, pp. 145-154, (2000)Fiore A., Oesterle U., Stanley R. P., Ilegems M.High-efficiency light-emitting diodes at approximate to 1.3 um using InAs-InGaAs quantum dots, IEEE Photonic Technol. Lett. Vol. 12, pp. 1601-1603, (2000)Houdre R., Weisbuch C., Stanley R. P., Oesterle U., Ilegems M.Nonlinear emission of semiconductor microcavities in the strong coupling regime, Phys. Rev. Lett. Vol. 85, pp. 2793-2796, (2000)Carlin J.-F., Stanley R.P., Pellandini P., Oesterle U. Ilegems M.The dual wavelength Bi-vertical cavity surface-emitting laser, Appl. Phys. Lett. 75, pp. 908-910 (1999).Royo P., Carlin J. F., Spicher J., Stanley R. P., Houdré R., Bardinal V., Oesterle U., Ilegems M.High Efficiency Top-Emitting Microcavity Light-Emitting Diodes, Photonics West '99, SPIE Vol. 3621, pp. 151 ; (1999).S.A. Makohliso, L. Giovangrandi, D. Léonard, H.-J. Mathieu, M. Ilegems, P. AebischerApplication of Teflon-AF thin films for biopatterning of neural cell adhesion. Biosensors and Bioelectronics, 13, 1227, 1998.M. Rochat, J. Faist, M. Beck, U. Oesterle, M. IlegemsFar-infrared (l = 88 mm) electroluminescence in a quantum cascade structure. Appl. Phys. Lett., Vol. 73, pp. 3724-3726, 1998.Jeanneret B., Hall B.D., Jeckelmann B., Feller U., Buehlmann H.J. Ilegems M.Measurements of edgeless currents in a Corbino ring in the quantum Hall regime, Solid State Comm. 102, 287-290, 1997Pellandini P., Stanley R.P., Houdré R., Oesterle U., Ilegems M., Weisbuch C.Dual-wavelength laser emission from a coupled semiconductor microcavity, Appl. Phys. Lett. 71, 864-866, 1997Beck M., Ilegems M.Influence of growth conditions on mobility and anisotropy of InyGa1-yAs/In0.52Al0.48As/InP HEMTsProc.8th Int. Conf. on InP and related materials, pp. 97-100 (1996).Carlin J.F., Rudra A., Ilegems M.Pseudomorphic InGaAs/In(Ga)AsP bidimentional electron gas grown by chemical beam epitaxy,J. Cryst. Growth 164, 470-475, 1996.Houdré R., Stanley R.P., Ilegems M.Strong coupling régime in the presence of inhomogeneous broadening : Resolution of a homogeneous linewidth in an inhomogeneously broadened system, Phys. Rev. A53, 2711-2715 (1996)Stanley R.P., Houdré R., C. Weisbuch, Oesterle U., Ilegems M. Cavity polariton photoluminescence in semiconductor microcavities : Experimental evidence, Phys. Rev. B53, 10 995-11 007 (1996)Spicher J., Klepser U., Beck M., Rudra A., Sachot R., Ilegems M., A 20 Gbit/s Monolithic photoreceiver using InAlAs/InGaAs HEMTs and regrown GaInAs p-i-n photodiodes, Proc. 8th Int. Conf. on InP and related materials, pp. 439-442 (1996).Hugi J., Haddab Y., Sachot R., Ilegems M. Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs /GaAs-on-GaAs superlattices. J. Appl. Phys. 77, 1785-1794, 1995.Ilegems M"III-V Compound semiconductor epitaxy for optoelectronic integration", in "Optoelectronic Integration: Physics, Technology and Applications", edited by O. Wada, pp. 61-106, Kluwer Academic Publishers, Boston, 1994Houdré R., Stanley R.P., Oesterle U., Ilegems M., Weisbuch C. Room temperature cavity-polaritons in a semiconductor microcavity. Phys. Rev. B 49, 16761-16764, 1994.Houdré R., Weisbuch C., Stanley, R.P., Oesterle U., Pellandini P., Ilegems M.Measurement of cavity-polariton dispersion curves from angle resolved photoluminescence experiments, Phys. Rev. Lett. 73, 2043-2046 (1994)Stanley R.P., Houidré R., Oesterle O., Gailhanou M., Ilegems M.Ultrahigh finesse microcavity with distributed Bragg reflectors, Appl. Phys. Lett. 65, 1883-1885 (1994)Stanley R., Houdré R., Oesterle U., Ilegems M., Weisbuch C.Coupled semiconductor microcavities, Appl. Phys. Lett. 65, 2093-2095 (1994)Rudra A., Houdré R., Carlin J.F., Ilegems M.Dynamics of island formation in the growth of InAs/InP quantum wells J. Crystal Growth 136, 278-281 (1994)Ilegems M. InP-based lattice-matched heterostructures, in "Properties of lattice-matched and strained Indium Gallium Arsenide", edited by P. Bhattacharya, pp. 16-25, EMIS Datareviews Series No 8 (INSPEC, London, 1993).Stanley R.P., Houdre R., Oesterle U., Ilegems M. Impurity Modes in One-Dimensional Periodic Systems - The Transition from Photonic Band-Gaps to Microcavities, Phys. Rev. A48, 2246 (1993).Carlin F, Houdré R, Rudra A., Ilegems M. Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy Appl. Phys. Lett. 59, pp 3018 - 3020, 1991Gueissaz F., Houdré R., Ilegems M. DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFET's. Electron. Lett. 27, 631-632, 1991.A. Acovic, M. Dutoit, M. IlegemsCharacterization of Hot-Electron-Stressed MOSFETs by Measurements of the Drain Tunnel Current. IEEE Trans. Electron Devices ED 37, 1467-1476, 1990M. Zirngibl, J.C. Bischoff, M. Ilegems, J.P. Hirtz, B. Bartelian, P. Beaud, W. Hodel High Speed 1.3 mm InGaAs/GaAs Superlattice on Si Photodetector. Electronics Letters 26, 1027-1029, 1990M. IlegemsAn introduction to molecular beam epitaxy, in "Crystal Growth in Science and Technology", H. Arend and J. Hulliger, editors, Nato ASI Series B, vol. 210. Plenum, New York (1988), pp. 359-395W. Schwitz, L. Bauder, H.J. Bühlmann, M.A. Py, M. Ilegems The Quantum Hall Effect as a standard to define the laboratory unit of resistance, IEEE Trans. Instrum. Meas. IM-36, 240 (1987)P. Fazan, M. Dutoit, C. Martin, M. IlegemsCharge generation in thin SiO2 polysilicon gate MOS capacitors, Solid State Electron. 30, 829 (1987)T.A. Achtnich, G. Burri, M.A. Py, M. Ilegems SIMS study of oxygen accumulation at GaAs/AlCaAs interJaces grown by MBE, Appl. Phys. Lett., 1730 (1987)M. IlegemsProperties of III-V layers, in "The Technology and Physics of Molecular Beam Epitaxv", E.H.C. Parker ed. (Plenum, New York, 1985), p. 83M. IlegemsApplications of selectively-doped two-dimensional electron layers,Helv. Phys. Acta 58, 383 (1985)P.K. Bhattacharya, H.J. Bühlmann, M. Ilegems, J.L. Staehli Impurity and defect level characterization of Be-doped GaAs grown by molecular beam epitaxy,J. Appl.Phys. 53, 6391 (1982)W.T. Tsang, R.A. Logan, M. IlegemsHigh power fundamental transverse mode strip buried heterostructure lasers wih linear light-current characteristics, Appl. Phys. Lett. 32, 311 (1978)M. Ilegems, B. Schwartz, L.A. Koszi, R.L. MillerIntegrated multi-junction GaAs photodetector with high output voltage, Appl. Phys. Lett. 33, 629 (1978)W.T. Tsang, M. IlegemsSelective area growth of GaAs/AlGaAs multilayer structures wih molecular beam epitaxy using Si shadow masks, Appl. Phys. Lett. 31, 301 (1977)M. IlegemsBe doping and diffusion in molecular beam epitaxy of GaAs and Al.3Ga.7As, J. Appl. Phys. 48, 1278 (1977)J.P. Van der Ziel, M. IlegemsOptical second harmonic generation in periodic multilayer GaAs - AlGaAs structures, Appl. Phys. Lett. 28, 437 (1976)A.S. Jordan, M. IlegemsSolid-liquid equilibria for quaternary solid solutions in the regular solution approximation J. Phys. Chem. Solids 36, 329 (1975)M. Ilegems, R. DingleAcceptor incorporation in GaAs grown by molecular beam epitaxy,Proc. 5th Int. Symp. on GaAs (Institute of Physics, London, 1975), p.1M. Ilegems, R. Dingle, L.W. RuppOptical and electrical properties of Mn-doped GaAs grown by molecular beam epitaxy, J. Appl. Phys. 46, 3059 (1975)H.C. Casey, S. Somekh, M. IlegemsRoom temperature operation of low threshold separate-confinement heterostructure injection laser with distributed feedback, Appl. Phys. Lett. 27, 142 (1975)J.P. Van der Ziel, M. IlegemsMultilayer AlGaAs - GaAs dielectric quarter-wave stacks grown by MBE, Appl. Optics, 14, 2627 (1975)M. Ilegems, M.B. PanishPhase equilibria in III-V quaternary systems -Application to Al-Ga-P-As, J. Phys. Chem. Solids 35, 409 (1974)M. Ilegems, H.C. MontgomeryElectrical properties of n-type vapor grown GaN,J. Phys. Chem Solids 34, 885 (1973)A.S. Barker, M. IlegemsInfrared lattice vibrations and free electron dispersion in GaN, Phys. Rev. B7, 743 (1973)M. IlegemsVapor epitaxy of GaN, J. Crystal Growth 13/14, 360 (1972)M. Ilegems, R. Dingle, R.A. LoganLuminescence of Zn- and Cd- doped GaN, J. Appl. Phys. 43, 3797 (1972)M.B. Panish, M. IlegemsPhase equilibria in ternary III-V systems, in "Progress in Solid State Chemistry" Vol. 7,H. Reiss, J.O. Mc Caldin eds. (Pergamon Press, New York, 1972), p. 39R. Dingle, D.D. Sell, S.E. Stokowski, M. IlegemsAbsorption, reflectance and luminescence of GaN epitaxial layers, Phys. Rev. B4, 1211 (1971)R. Dingle, M. IlegemsDonor-acceptor pair recombination in GaN, Solid State Commun. 2, 175 (1971 )M. Ilegems, G.L. PearsonInfrared reflectance spectra of Al-Ga-As mixed crystals, Phys. Rev. Bl, 1576 (1970) Teaching & PhD Past EPFL PhD Students Youcef Haddab, Marc Gailhanou, Mattias Beck, Jacques Spicher, Didier Bouvet, Martin Gotza, Christian Dill, Laurent Giovangrandi, Paul Royo, Marcel Brunner, Daniel Ochoa, Volker Wagner, Christoph Zellweger, Vlad Badilita, Reto Joray Past EPFL PhD Students as codirector Julien DorsazDissertations Dorsaz, JulienLattice-matched allnN alloys for nitride-based optoelectronic devices (2006) Joray, Reto Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004)Badilita, Vlad Study of vertical coupled-cavity laser structures (2004)Zellweger, Christoph Realization of GaN-based light emitting devices (2003)Wagner, Volker Growth of GaN by hydride vapor phase epitaxy (2001)Ochoa, Daniel Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001)Brunner, Marcel Design and characterization of single and dual cavity oxide-apertured VCSELs (2000)Royo, Paul Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000)Giovangrandi, Laurent Biopatterning of neural cells on microelectrode arrays (1999)Dill, Christian Fabrication and characterization of high efficiency microcavity light emitting diodes (1999)Gotza, Martin Fabrication and optical characterization of silicon nanowires (1997)Bouvet, Didier Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997)Spicher, Jacques Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996)Beck, Mattias Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996)Haddab, Youcef Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995)Gailhanou, Marc Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995)Oesterle, Ursula Growth and characterization of novel vertical emitting semiconductor structures (1994)Hugi, Johannes Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994)Carlin, Jean-François Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993)Baeta Moreira, Marcus Vinicius Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992)Gueissaz, François Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992)Zirngibl, Martin High speed photodetectors on strained superlattices (1990)Manthey, Jacek Tadeusz Degradation of thin silicon dioxide films and eeprom cells(1990)Acovic, Alexandre Hot electron degradation in short-channel MOS transistors (1989)Théron, Didier Etude de TEGFETs multicanaux (1989)Zimmermann, Piller Beate Modeling of III-V semiconductor devices (1989)Bischoff, Jean-Claude Composants ultra-rapides pour communications optiques (1988)Achtnich, Thomas Martin Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988)Marclay, Etienne Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988)Fazan, Pierre-Christophe Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988)Olcer, Murat Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985)Nottenburg, Richard Norman Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)