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Lecture

Scanning Electron Microscopy: Fundamentals and Applications

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CH-633: Advanced Solid State and Surface Characterization

State-of-the-art surface/thin film characterization methods of polycrystalline/nano/amorphous materials. Selected topics from thin film X-ray diffraction (GIWAXS, GISAXS, PDF), electronic and optical spectroscopy (XPS, AES, SERS, TERS), scanning probe and ...

Description

This lecture covers the fundamentals of scanning electron microscopy (SEM), including electron matter interaction, SEM setup, imaging techniques, challenges, and related techniques like energy dispersive X-ray spectroscopy (EDS) and electron backscatter diffraction (EBSD). The instructor explains the importance of fast electrons for achieving high resolution imaging, the contrast mechanisms in SEM, and the impact of beam damage, contamination, and charging. Various SEM signals such as secondary electrons (SE), backscattered electrons (BSE), and characteristic X-rays are discussed, along with techniques to improve signal-to-noise ratio and resolution. The lecture also delves into advanced topics like environmental SEM and 3D microscopy using focused ion beam (FIB) and EBSD for crystallographic analysis.

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Instructors (3)

Emad Oveisi

Dr Emad Oveisi is a senior scientist at the Interdisciplinary Centre for Electron Microscopy (CIME), EPFL. Emad received a BSc in Metallurgy and Materials Engineering (2005) and an MSc in Materials Science (2008) both from the University of Tehran (Iran). He graduated with a PhD in Materials Science and Engineering at EPFL in 2014 for a thesis on the "Three-Dimensional STEM Imaging of Dislocations" under the direction of Prof. Cécile Hébert. The PhD thesis at the Electron Spectrometry and Microscopy Laboratory (LSME), served as an introduction to many of the advanced microscopy techniques that have proven to be a platform for his research career. A post-doctoral research at the centre for electron microscopy gave him the opportunity to peruse a cutting-edge research on one of the most modern aberration-corrected transmission electron microscopes.Since the inauguration of the Energypolis campus of EPFL in Sion, he has been the manager and reference scientist of the electron microscopy platform of EPFL-Valais, working with 9 research groups and more than 200 researchers. In addition to this core responsibility, he provides advanced microscopy consulting and service to EPFL scientists and assist their research to the highest level possible. Emad Oveisi’s research focuses on the application and development of novel electron microscopy techniques, with emphasis on 3D imaging of crystal defects, as well as the precision measurement of materials properties using aberration-corrected S/TEM. In 2018, he received the prestigious Microscopy Innovation Award for inventing “Single-shot three-dimensional electron imaging”, a novel technique that enables 3D imaging of in situ dynamics. In 2016 Emad was elected as an interim representative for the scientific staff ("corps intermédiaire") to the Council of the Institute of Chemistry (ISIC). Since 2019, he is a member of EPFL Teachers’ Council (CCE) and has been elected as one of its four bureau members. This role allows him to be exposed to new ideas and pedagogical challenges, as well being involved in discussions with the Vice Presidency of Education (VPE) and other teaching organisations for defining teaching strategies at the EPFL.

Pascal Alexander Schouwink

Mounir Driss Mensi

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Ontological neighbourhood

Industrial and production engineering

Manufacturing engineering: Electron-beam technology

Related concepts (32)

Scanning electron microscope

A scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons. The electrons interact with atoms in the sample, producing various signals that contain information about the surface topography and composition of the sample. The electron beam is scanned in a raster scan pattern, and the position of the beam is combined with the intensity of the detected signal to produce an image.

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Transmission electron microscopy

Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.

Electron diffraction

Electron diffraction refers to changes in the direction of electron beams due to interactions with atoms. Close to the atoms the changes are described as Fresnel diffraction; far away they are called Fraunhofer diffraction. The resulting map of the directions of the electrons far from the sample (Fraunhofer diffraction) is called a diffraction pattern, see for instance Figure 1. These patterns are similar to x-ray and neutron diffraction patterns, and are used to study the atomic structure of gases, liquids, surfaces and bulk solids.

Signal-to-noise ratio

Signal-to-noise ratio (SNR or S/N) is a measure used in science and engineering that compares the level of a desired signal to the level of background noise. SNR is defined as the ratio of signal power to noise power, often expressed in decibels. A ratio higher than 1:1 (greater than 0 dB) indicates more signal than noise. SNR is an important parameter that affects the performance and quality of systems that process or transmit signals, such as communication systems, audio systems, radar systems, imaging systems, and data acquisition systems.

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