Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

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The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

The design of a bi-state output buffer that can handle 5 times the supply voltage is presented. The use of self-biasing stacked devices driven by a cascade of complementary latches allows all devices to operate within the limits set by the technology, thus ...

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

Bilayer organic solar cells based on trimethine cyanine donor and C-60 acceptor materials have been fabricated by coating the trimethine dye from solution on molybdenum oxide (MoO3) anode buffer layer. The choice of deposition solvent drastically influence ...

Single-phase active rectifiers exhibit an inherent strong second-order current harmonic on their DC-link. The latter is often undesirable from a load point of view and is therefore chosen to be eliminated. A common method is the use of a resonant passive L ...

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Electrical contacts between nanoengineered systems are expected to constitute the basic building blocks of future nanoscale electronics. However, the accurate characterization and understanding of electrical contacts at the nanoscale is an experimentally c ...

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Mechanistic study on the evolution of vacancies in graphene by oxidation by scanning tunneling microscopy

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Negative capacitance semiconductor sensor

Advances in the characterization of nanowire photovoltaic devices

High-Voltage Tolerant Bi-State Self-Biasing Output Driver using Cascade Complementary Latches in Twin-well CMOS Technology

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Dynamic Analysis and State Feedback Voltage Control of Single-Phase Active Rectifiers with DC-Link Resonant Filters

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Modeling methodology of high-voltage substrate minority and majority carrier injections

On performance of series connected CMOS vertical hall devices

Ferroelectric Gate on AlGaN/GaN Heterostructures