Publications related to Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Mechanistic study on the evolution of vacancies in graphene by oxidation by scanning tunneling microscopy

Shaoxian Li

Nanostructured graphitic materials, including graphene hosting Å to nanometer-sized pores, have attracted attention for various applications such as separations, sensors, and energy storage. Graphene with Å-scale pores is a promising next-generation materi ...

EPFL2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Advances in the characterization of nanowire photovoltaic devices

Dmitry Mikulik

III-V nanowires (NWs) have a great potential for solar energy applications due to their diameter-dependent optical properties, which may enhance absorption of light. In addition, core-shell radial p-i-n structures, in which the direction of light absorptio ...

EPFL2018

High-Voltage Tolerant Bi-State Self-Biasing Output Driver using Cascade Complementary Latches in Twin-well CMOS Technology

Scott Anthony Lindner

The design of a bi-state output buffer that can handle 5 times the supply voltage is presented. The use of self-biasing stacked devices driven by a cascade of complementary latches allows all devices to operate within the limits set by the technology, thus ...

Ieee2016

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Denis Martin, Nicolas Grandjean, Marco Malinverni, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Denis Martin, Nicolas Grandjean, Hironori Okumura

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

Amer Inst Physics2016

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Laurent Syavoch Bernard, Antonios Bazigos, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

Influence of Molybdenum Oxide Interface Solvent Sensitivity on Charge Trapping in Bilayer Cyanine Solar Cells

Frank Nüesch, Beat Ruhstaller, Roland Hany

Bilayer organic solar cells based on trimethine cyanine donor and C-60 acceptor materials have been fabricated by coating the trimethine dye from solution on molybdenum oxide (MoO3) anode buffer layer. The choice of deposition solvent drastically influence ...

Amer Chemical Soc2014

Dynamic Analysis and State Feedback Voltage Control of Single-Phase Active Rectifiers with DC-Link Resonant Filters

Alfred Rufer, Michail Vasiladiotis

Single-phase active rectifiers exhibit an inherent strong second-order current harmonic on their DC-link. The latter is often undesirable from a load point of view and is therefore chosen to be eliminated. A common method is the use of a resonant passive L ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

François Patthey, Wolf-Dieter Schneider, I-Po Hong

Electrical contacts between nanoengineered systems are expected to constitute the basic building blocks of future nanoscale electronics. However, the accurate characterization and understanding of electrical contacts at the nanoscale is an experimentally c ...

2012

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Modeling methodology of high-voltage substrate minority and majority carrier injections

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

2010

On performance of series connected CMOS vertical hall devices

Radivoje Popovic, Mirjana Banjevic

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Ferroelectric Gate on AlGaN/GaN Heterostructures

Paul Muralt, Nava Setter, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007