Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

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Dynamic Analysis and State Feedback Voltage Control of Single-Phase Active Rectifiers with DC-Link Resonant Filters

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Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

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Ferroelectric Gate on AlGaN/GaN Heterostructures