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Pierre-Emmanuel Julien Marc Gaillardon

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Publications associées (119)

Polarity-Controllable Silicon Nanowire Transistors with Dual Threshold Voltages

Yusuf Leblebici, Giovanni De Micheli, Michele De Marchi, Davide Sacchetto, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

Gate-all-around (GAA) silicon nanowires enable an unprecedented electrostatic control on the semiconductor channel that can push device performance with continuous scaling. In modern electronic circuits, the control of the threshold voltage is essential fo ...

Institute of Electrical and Electronics Engineers2014

Fast Process Variation Analysis in Nano-Scaled Technologies Using Column-Wise Sparse Parameter Selection

Giovanni De Micheli, Majid Yazdani, Hassan Ghasemzadeh Mohammadi, Pierre-Emmanuel Julien Marc Gaillardon

With growing concern about process variation in deeply nano-scaled technologies, parameterized device and circuit modeling is becoming very important for design and verification. However, the high dimensionality of parameter space is a serious modeling cha ...

2014

A Circuit Synthesis Flow for Controllable-Polarity Transistors

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

Double-Gate (DG) controllable-polarity Field-Effect Transistors (FETs) are devices whose n- or p- polarity is on-line configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotuges a ...

Institute of Electrical and Electronics Engineers2014

Majority Logic Representation and Satisfiability

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

Majority logic is a powerful generalization of common AND/OR logic. Original two-level and multi-level logic networks can use majority operators as primitive connective, in place of AND/ORs. In such a way, Boolean functions have novel means for compact rep ...

2014

Configurable Circuits Featuring Dual-Threshold-Voltage Design With Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Jian Zhang, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon

Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

A New Basic Logic Structure for Data-Path Computation

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, Field Programmable Gate Arrays (FPGA) implement arithmetic functions using specific circuits at the logic block level, such as the carry paths, or at the structure level adopting Digital Signal Processing (DSP) blocks. Nevertheless, all these app ...

2014

Nanowire systems: technology and design (invited paper)

Giovanni De Micheli, Shashi Kanth Bobba, Michele De Marchi, Davide Sacchetto, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

Majority Logic Synthesis for Spin Wave Technology

Giovanni De Micheli, Luca Gaetano Amarù, Odysseas Zografos, Pierre-Emmanuel Julien Marc Gaillardon

Spin Wave Devices (SWDs) are promising beyond-CMOS candidates. Unlike traditional charge-based technologies, SWDs use spin as information carrier that propagates in waves. In this scenario, the logic primitive for computation is the majority gate. T ...

2014

Biconditional Binary Decision Diagrams: A Novel Canonical Logic Representation Form

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

In this paper, we present biconditional binary deci- sion diagrams (BBDDs), a novel canonical representation form for Boolean functions. BBDDs are binary decision diagrams where the branching condition, and its associated logic expansion, is biconditional ...

2014

A High-Performance Low-Power Near-Vt RRAM-based FPGA

Giovanni De Micheli, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon

The routing architecture, heavily using programmable switches, dominates the area, delay and power of Field Programmable Gate Arrays (FPGAs). Resistive Random Access Memories (RRAMs) enable high-performance routing architectures through the r ...

2014

TSPC Flip-Flop Circuit Design with Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Jian Zhang, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon

True Single-Phase Clock (TSPC) Flip-Flops, based on dynamic logic implementation, are area-saving and high-speed compared to standard static flip-flops. Furthermore, logic gates can be embedded into TSPC flip-flops which significantly improves performance. ...

IEEE2014

Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Yusuf Leblebici, Giovanni De Micheli, Michele De Marchi, Davide Sacchetto, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Yusuf Leblebici, Pascal Andreas Meinerzhagen, Giovanni De Micheli, Davide Sacchetto, Andreas Peter Burg, Pierre-Emmanuel Julien Marc Gaillardon

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories as well as status registers. On the one hand, supply voltage scaling down to the near-threshold (near-VT

Institute of Electrical and Electronics Engineers2014

System Level Benchmarking with Yield-Enhanced Standard Cell Library for Carbon Nanotube VLSI Circuits

Giovanni De Micheli, Shashi Kanth Bobba, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon, Subhasish Mitra

The quest for technologies with superior device characteristics has showcased Carbon-Nanotube Field-Effect Transistors (CNFET) into limelight. In this work we present physical design techniques to improve the yield of CNFET circuits in the presence of Carb ...

Assoc Computing Machinery2014

Controllable polarity fet based arithmetic and differential logic

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

A logic gate with three inputs A, B, and C, and one output implementing a function MAJ(A,B,C)=AB+BC+A*C comprising two mutually exclusive transmission gates (TGs) connected in series, based on two parallel double-gate controllable polarity devices, a pol ...

2014

Pattern-Based FPGA Logic Block and Clustering Algorithm

Giovanni De Micheli, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon

In classical FPGA, LUTs and DFFs are pre-packed into BLEs and then BLEs are grouped into logic blocks. We propose a novel logic block architecture with fast combinational paths between LUTs, called pattern-based logic blocks. A new clustering algorithm is ...

IEEE2014

An Efficient Manipulation Package for Biconditional Binary Decision Diagrams

Giovanni De Micheli, Luca Gaetano Amarù, Pierre-Emmanuel Julien Marc Gaillardon

Biconditional Binary Decision Diagrams (BBDDs) are a novel class of binary decision diagrams where the branching condition, and its associated logic expansion, is biconditional on two variables. Reduced and ordered BBDDs are remarkably compact and unique f ...

IEEE2014

Heterogeneous integration of ReRAM crossbars in a CMOS foundry chip

Yusuf Leblebici, Giovanni De Micheli, Alessandro Cevrero, Davide Sacchetto, Jury Sandrini, Pierre-Emmanuel Julien Marc Gaillardon, Tugba Demirci

In this paper, we present a heterogeneous integration of ReRAMs with standard CMOS technology by post-processing the Back-End-of-the-Line (BEOL) of fully finished CMOS chips. ...

2014

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Giovanni De Micheli, Michele De Marchi, Jian Zhang, Pierre-Emmanuel Julien Marc Gaillardon

In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA ...

2014

Introduction to the Special Section on Functionality-Enhanced Devices

Giovanni De Micheli, Thomas Ernst, Pierre-Emmanuel Julien Marc Gaillardon, Subhasish Mitra

Institute of Electrical and Electronics Engineers2014

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