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Farzan Jazaeri

Cette personne a quitté l’EPFL

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Publications associées (81)

Page 3 sur 5

Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

This paper aims to model asymmetric operation in double gate junctionless FETs. Following a rigorous approach, we find that asymmetric operation can be simulated by combining two symmetric junctionless FETs, what we call the virtual symmetric device concep ...

Institute of Electrical and Electronics Engineers2014

Molecular Engineering of Simple Metal-Free Organic Dyes Derived from Triphenylamine for Dye-Sensitized Solar Cell Applications

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ulf Anders Hagfeldt, Farzan Jazaeri, Yuhang Liu, Yasemin Saygili, Parnian Ferdowsi

Two new metal-free organic sensitizers, L156 and L224, were designed, synthesized, and characterized for application in dye-sensitized solar cells (DSCs). The structures of the dyes contain a triphenylamine (TPA) segment and 4-(benzo[c][1,2,5]thiadiazol-4- ...

WILEY-V C H VERLAG GMBH2020

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Cryo-CMOS Compact Modeling

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This paper highlights some of the challenges faced for the modeling of MOSFET devices for operation at cryogenic temperature (CT). A special focus is given on the modeling of the threshold voltage V-T and the subthreshold swing SS. The significant increase ...

IEEE2020

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

Jean-Michel Sallese, Farzan Jazaeri, Michael Saliba, Parnian Ferdowsi

Predicting the performance of solar cells though analytical models is important for the theory-guided optimization of these devices. Earlier models neglect the impact of the optical generation in the quasi-neutral regions of a perovskite solar cell. Here, ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

Study of Donor-like Surface Trap Emission in GaN HEMTs

Farzan Jazaeri

Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on ...

IEEE2021

Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices

Jean-Michel Sallese, Farzan Jazaeri, Didier Bouvet, Lucian Barbut

This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...

Institute of Electrical and Electronics Engineers2014

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Jean-Michel Sallese, Farzan Jazaeri, Matthias Bucher

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

FOSS EKV 2.6 parameter extractor

Jean-Michel Sallese, Farzan Jazaeri, Antonios Bazigos, Wladyslaw Grabinski, Anurag Mangla, Maria-Anna Chalkiadaki

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Ieee2015

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

2017

Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018