Publications de Farzan Jazaeri

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This paper presents a physics-based analytical model for investigating charge trapping in GaN high-electron-mobility transistors (HEMTs), using the École Polytechnique Fédérale de Lausanne HEMT core model. It introduces a realistic continuous density of in ...

This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been successfully manufactured on SOI substrates with a doping density 5×1018 atoms/cm3. The devices demonst ...

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

The Automatic Gain Control (AGC) systems based on nanoscale Field Effect Diode (FED) and double gate silicon on insulator (SOI) MOSFET are investigated in this paper. Using double gate devices leads to more flexibility in gain controlling, improving perfor ...

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...

Metal-oxide semiconductor (MOS) field-effect transistor (FET) scaling is following the prediction of the Moore's law for the past 45 years, a key factor that enabled the IC industry to cope with the everlasting demand for higher performances. However, this ...

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

This paper presents analytical expressions for channel noise, induced gate noise (IGN), and cross-correlation noise in a long-channel junctionless (JL) double-gate MOSFET. The analytical relationships, which have been derived from a coherent charge-based m ...

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in addition to assuming a well-defined field-dependent mobility law, using the well-known Y-function is ...

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

This paper aims to model asymmetric operation in double gate junctionless FETs. Following a rigorous approach, we find that asymmetric operation can be simulated by combining two symmetric junctionless FETs, what we call the virtual symmetric device concep ...

Two new metal-free organic sensitizers, L156 and L224, were designed, synthesized, and characterized for application in dye-sensitized solar cells (DSCs). The structures of the dyes contain a triphenylamine (TPA) segment and 4-(benzo[c][1,2,5]thiadiazol-4- ...

Farzan Jazaeri

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Modeling the Effects of Interface Traps on DC Characteristics in GaN High-Electron-Mobility Transistors

Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Low-power and high-performance Automatic Gain Control systems based on nanoscale Field Effect Diode and SOI-MOSFET

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Modeling Junctionless Metal-Oxide-Semiconductor Field-Effect Transistor

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Non Quasi-Static Model of DG Junctionless FETs

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices

Molecular Engineering of Simple Metal-Free Organic Dyes Derived from Triphenylamine for Dye-Sensitized Solar Cell Applications