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Farzan Jazaeri

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Publications associées (81)

Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETs

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close to the band edge modify the saturating temperature behavior of the threshold voltage observed in cryogenic measurements. Dopant freezeout, ...

2020

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...

Institute of Electrical and Electronics Engineers2020

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Jean-Michel Sallese, Mihai Adrian Ionescu, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

Modeling of Short-Channel Effects in GaN HEMTs

Farzan Jazaeri

In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the ecole Poly ...

2020

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Matteo Cavalieri, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Inflection Phenomenon in Cryogenic MOSFET Behavior

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

2020

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electro ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Molecular Engineering of Simple Metal-Free Organic Dyes Derived from Triphenylamine for Dye-Sensitized Solar Cell Applications

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ulf Anders Hagfeldt, Farzan Jazaeri, Yasemin Saygili, Parnian Ferdowsi, Yuhang Liu

Two new metal-free organic sensitizers, L156 and L224, were designed, synthesized, and characterized for application in dye-sensitized solar cells (DSCs). The structures of the dyes contain a triphenylamine (TPA) segment and 4-(benzo[c][1,2,5]thiadiazol-4- ...

WILEY-V C H VERLAG GMBH2020

Cryo-CMOS Compact Modeling

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper highlights some of the challenges faced for the modeling of MOSFET devices for operation at cryogenic temperature (CT). A special focus is given on the modeling of the threshold voltage V-T and the subthreshold swing SS. The significant increase ...

IEEE2020

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jean-Michel Sallese, Seyed Armin Tajalli, Farzan Jazaeri, Arnout Lodewijk M Beckers

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

CJM: A Compact Model for Double-Gate Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

2018

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