Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.
Andreas Schueler, Josef Andreas Schuler, Olivia Valérie Charlotte Bouvard, Timothée Chatelain, Luc Burnier, Dasaraden Mauree, Samson Taylor, Jérémy Jacques Antonin Fleury
Krunoslav Prsa, Martin Mansson, Kamil Sedlák