Publication
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Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand
Nicolas Würsch, Sylvain Dunand
Edoardo Charbon, Francesco Piro