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Eric Feltin

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Publications associées (85)

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Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Georg Rossbach, Marlene Glauser

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Sylvain Nicolay

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

Wiley2007

Spontaneous polarization buildup in a room-temperature polariton laser

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

2008

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Sylvain Nicolay

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

2008

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

2007

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Eric Feltin, Jean-Daniel Ganière, Pierre Michel Corfdir

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

Design considerations and performance of n(++) GaN/InAlN/AlN/GaN normally off high-electron mobility transistors (HEMTs) are analyzed. Selective and damage-free dry etching of the gate recess through the GaN cap down to a 1-nm-thick InAlN barrier secures p ...

2010

Impact of disorder on high quality factor III-V nitride microcavities

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN/GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up ...

2006

Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of cohe ...

2008

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

A detailed experimental investigation of the phonon-assisted emission in a high-quality c-plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica ...

2010

Barrier-layer scaling of InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

Institute of Electrical and Electronics Engineers2008

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Alexei Altoukhov

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

2008

Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

Nicolas Grandjean, Eric Feltin

Near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are investigated by means of the diamond anvil cell high-pressure technique. The hydrostatic pressure dependence of the photoluminescence dE(PL)/dp and the variation in the PL peak energy with th ...

2008

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Gatien Cosendey, Alexei Altoukhov

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

Phase diagram of a polariton laser from cryogenic to room temperature

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Jacques Levrat

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009

Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Julien Dorsaz

Very narrow spontaneous emission (Deltalambda similar to 0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made o ...

2005

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Anas Mouti

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexago ...

AIP American Institute of Physics2010