Home

Person

Eric Feltin

About
Privacy
Disclaimer

Graph Chatbot

Related publications (86)

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Jean-François Carlin, Julien Dorsaz, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

High doping level in Mg-doped GaN layers grown at low temperature

Nicolas Grandjean, Eric Feltin

We have studied the properties of Mg-doped GaN epilayers grown by molecular beam epitaxy (MBE) with ammonia as nitrogen source. GaN p-n homojunctions has been developed to determine the optoelectronic characteristics of the junctions as a function of the p ...

2008

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Mauro Mosca, Antonino Francesco Castiglia

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

2008

Spontaneous polarization buildup in a room-temperature polariton laser

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

2008

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

2008

Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of cohe ...

2008

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

Barrier-layer scaling of InAlN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 ...

Institute of Electrical and Electronics Engineers2008

Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

Nicolas Grandjean, Eric Feltin

Near-lattice-matched GaN/AlInN multiple quantum wells (MQWs) are investigated by means of the diamond anvil cell high-pressure technique. The hydrostatic pressure dependence of the photoluminescence dE(PL)/dp and the variation in the PL peak energy with th ...

2008

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

2008

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate thresh ...

2008

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...

2008

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Denis Martin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Tiankai Zhu

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report on the experimental achievement of narrow ultraviolet excitonic and biexcitonic emission from GaN/AlGaN quantum wells. The very large biexciton binding energy (up to 12 meV) inhibits thermalization between the two species allowing to study the re ...

2008

Built-in electric field and large Stokes shift in near-lattice-matched GaN/AlInN quantum wells

Nicolas Grandjean, Eric Feltin

Near-lattice-matched GaN/AlInN quantum wells are investigated by means of contactless electroreflectance (CER) and temperature-dependent photoluminescence (PL). Large Stokes shifts, up to 400 meV, between PL peak energies and CER resonances are identified. ...

2008

Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime

Jean-François Carlin, Pierre Stadelmann, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia, Anas Mouti

An AlInN/AlGaN microcavity (MC) containing a GaN/Al0.2Ga0.8N multiple quantum well (MQW) structure is investigated through room temperature (RT) photoluminescence and reflectivity experiments. A vacuum Rabi splitting as large as 50 meV at RT is reported fo ...

2008

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jean-François Carlin, Marcel Py, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca, Dobri Simeonov, Gabriel Christmann, Antonino Francesco Castiglia, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Growth mode induced carrier localization in InGaN/GaN quantum wells

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Raphaël Butté, Eric Feltin

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

2007

Page 3 of 5