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Eric Feltin

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Publications associées (85)

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Narrow UV emission from homogeneous GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

2007

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat

We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...

2008

Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Anas Mouti

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...

2009

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate thresh ...

2008

High-speed and low-noise AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate parasitic ...

Wiley2011

Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

We report a study of self-assembled GaN/AlN quantum dots (QDs) grown by metalorganic vapor phase epitaxy. We have investigated the impact of the AlN template quality on the nucleation of QDs obtained by the so-called Stranski-Krastanov growth mode transiti ...

2007

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Antonino Francesco Castiglia, Jacques Levrat, Gatien Cosendey, Alexei Altoukhov

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2010

Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector

Nicolas Grandjean, Eric Feltin, Raphaël Butté, Denis Martin, Gabriel Christmann

Nonpolar GaN based microcavity (MC) made of a bottom AlN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/SiNx DBR has been fabricated on a-plane GaN template. The 13 pair AlN/GaN DBR, centered around 372 nm, exhibits a peak reflectivity of ...

2008

Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

GaN/AlGaN and InGaN/GaN quantum wells (QWs) are investigated as the active region for room-temperature strong exciton-photon coupling in high-quality AlInN/(Al)GaN microcavities (MCs). Angular resolved photoluminescence (PL) measurements performed on an Al ...

2006

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Gatien Cosendey

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...

2007

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

2006

Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Gabriel Christmann

The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...

2006

Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté

We report on the experimental achievement of narrow ultraviolet excitonic and biexcitonic emission from GaN/AlGaN quantum wells. The very large biexciton binding energy (up to 12 meV) inhibits thermalization between the two species allowing to study the re ...

2008

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Antonino Francesco Castiglia, Jacques Levrat, Alexei Altoukhov

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Sylvain Nicolay

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...

2005