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Andras Kis

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Publications associées (113)

Electrical contacts to two-dimensional semiconductors

Andras Kis, Adrien Victor Allain

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as wel ...

Nature Publishing Group2015

Electronic properties of transition-metal dichalcogenides

Andras Kis

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are ...

Cambridge Univ Press2015

Large-area MoS2 grown using H2S as the sulphur source

Andras Kis, Aleksandra Radenovic, Duncan Thomas Lindsay Alexander, Philippe Gillet, Oriol López Sánchez, Dmitry Ovchinnikov, Dumitru Dumcenco

We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate pl ...

2015

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Andras Kis, Zhe Sun

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed ...

Royal Society of Chemistry2015

MoS2 Transistors Operating at Gigahertz Frequencies

Yusuf Leblebici, Andras Kis, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

American Chemical Society (ACS)2014

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

Andras Kis, Simone Bertolazzi, Wei Cao

Conventional floating-gate (FG) transistors (made with Si/poly-Si) that form the building blocks of the widely employed nonvolatile flash memory technology face severe scaling challenges beyond the 12-nm node. In this paper, for the first time, a comprehen ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Atomically Thin Molybdenum Disulfide Nanopores with High Sensitivity for DNA Translocation

Andras Kis, Aleksandra Radenovic, Jiandong Feng, Ke Liu

Atomically thin nanopore membranes are considered to be a promising approach to achieve single base resolution with the ultimate aim of rapid and cheap DNA sequencing. Molybdenum disulfide (MoS2) is newly emerging as a material complementary to graphene du ...

Amer Chemical Soc2014

Electrical Transport Properties of Single-Layer WS2

Andras Kis, Dmitry Ovchinnikov, Adrien Victor Allain, Dumitru Dumcenco

We report on the fabrication of field-effect transistors based on single layers and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment a ...

Amer Chemical Soc2014

Integrated Circuits and Logic Operations Based on Single-Layer MoS2 (vol 5, pg 9934, 2011)

Andras Kis, Branimir Radisavljevic

Amer Chemical Soc2013

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Simone Bertolazzi, Daria Krasnozhon

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Detecting the translocation of DNA through a nanopore using graphene nanoribbons

Mohamed Malik Benameur, Andras Kis, Aleksandra Radenovic, Camille Alice Raillon, Floriano Traversi, Daria Krasnozhon, Sergey Khlybov, Ke Liu

Solid-state nanopores can act as single-molecule sensors and could potentially be used to rapidly sequence DNA molecules. However, nanopores are typically fabricated in insulating membranes that are as thick as 15 bases, which makes it difficult for the de ...

Nature Publishing Group2013

Small-signal amplifier based on single-layer MoS2 (vol 101, 043103, 2012)

Andras Kis, Branimir Radisavljevic

Amer Inst Physics2013

Ultrasensitive photodetectors based on monolayer MoS2

Andras Kis, Aleksandra Radenovic, Metin Kayci, Dominik Sebastian Lembke, Oriol López Sánchez

Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene(1) is the most well-studied two-dimensional material, single layers of other materials, such ...

Nature Publishing Group2013

Mobility engineering and a metal–insulator transition in monolayer MoS2

Andras Kis, Branimir Radisavljevic

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered mate ...

Nature Publishing Group2013

Ultrathin MoS2 membranes and their characterization through HRTEM and electron diffraction studies

Andras Kis, Duncan Thomas Lindsay Alexander, Jacopo Brivio

Cambridge, Cambridge University Press2012

Small-signal amplifier based on single-layer MoS2

Andras Kis, Branimir Radisavljevic

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic ...

American Institute of Physics2012

Micro-fabrication process for small transport devices of layered manganite

Andras Kis, Aleksandra Radenovic, Henrik Moodysson Rønnow, Arash Alahgholipour Omrani

Devices have been fabricated based on the bilayer manganite La1.4Sr1.6Mn2O7, which in the bulk state orders magnetically below 90 K, at which point both in-plane and c-axis bulk resistivity decrease by 2-3 orders of magnitude. We provide an optimized proce ...

American Institute of Physics2012

Semiconductor device

Andras Kis, Branimir Radisavljevic

Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2. ...

2012

Long-term retention in organic ferroelectric-graphene memories

Nava Setter, Igor Stolichnov, Andras Kis, Mahmut Tosun, Santosh Raghavan

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

American Institute of Physics2012

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