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Kirsten Emilie Moselund

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Publications associées (51)

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Resistive Coupled VO2 Oscillators for Image Recognition

Mihai Adrian Ionescu, Igor Stolichnov, Kirsten Emilie Moselund, Elisabetta Corti

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

IEEE2019

Simulation and Fabrication of Monolithic III-V Photodetectors on Si: The Role of Growth Facets and Localization of Heterojunctions

Kirsten Emilie Moselund, Simone Iadanza

In this work, we provide important parameters to take into account when fabricating in-plane III-V photodetectors (PDs) integrated on silicon (Si) using template-assisted selective epitaxy (TASE). Their performance has previously been demonstrated, and her ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2024

Controlling lasing around exceptional points in coupled nanolasers

Kirsten Emilie Moselund

Coupled nanolasers are of growing interest for on-chip optical computation and data transmission, which requires an understanding of how lasers interact to form complex systems. The non-Hermitian interaction between two coupled resonators, when excited sel ...

2024

Nanoscale strain characterisation for ultimate CMOS and beyond

Mihai Adrian Ionescu, Kirsten Emilie Moselund

Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, ...

Elsevier2008

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Luc Thévenaz, Mihai Adrian Ionescu, Kirsten Emilie Moselund

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

IEEE2006

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Mihai Adrian Ionescu, Maher Kayal, Kirsten Emilie Moselund, Vincent Pott

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/dec ...

Institute of Electrical and Electronics Engineers2008

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Phase of Topological Lattice with Leaky Guided Mode Resonance

Kim Seonyeong, Kirsten Emilie Moselund

Topological nature in different areas of physics and electronics has often been characterized and controlled through topological invariants depending on the global properties of the material. The validity of bulk-edge correspondence and symmetry-related to ...

MDPI2023

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

Kirsten Emilie Moselund

Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control sig ...

2024

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti

In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area densit ...

2021

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Vincent Pott

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Mihai Adrian Ionescu, Romuald Houdré, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Nicolas Le Thomas

2006

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

2006

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Kirsten Emilie Moselund

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those pho ...

Amer Chemical Soc2024

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Cédric Meinen

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008