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Kirsten Emilie Moselund

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Related publications (53)

Resistive Coupled VO2 Oscillators for Image Recognition

Igor Stolichnov, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Elisabetta Corti, Siegfried Karg

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

IEEE2019

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Fabien Patrick Wildhaber, Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

III-V heterostructure tunnel field-effect transistor

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

2018

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Kirsten Emilie Moselund, Anna Fontcuberta i Morral, Heike Riel, Rolf Erni, Luca Francaviglia, Nicolas Bologna

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

2018

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

Corner Effect and Local Volume Inversion in SiNW FETs

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Luca Selmi

In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of ...

Institute of Electrical and Electronics Engineers2011

The high-mobility bended n-channel silicon nanowire transistor

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Semiconductor device and method of manufacturing a semiconductor device

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt curren ...

2009

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Kirsten Emilie Moselund

For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...

EPFL2008

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

Didier Bouvet, Mihai Adrian Ionescu, Kirsten Emilie Moselund

In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the ID(V GS) device characteristics are less than 10 mV/dec ...

Institute of Electrical and Electronics Engineers2008

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Katherine Boucart

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

2008

Prospects for logic-on-a-wire

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching ...

2008

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

2008

Nanoscale strain characterisation for ultimate CMOS and beyond

Mihai Adrian Ionescu, Kirsten Emilie Moselund

Strain engineering is used to maintain Moore's Law in scaled CMOS devices and as a technology booster for More-than-Moore devices in the nanoelectronics era. Strain is crucial because of its ability to increase electron and hole mobilities in Si. However, ...

Elsevier2008

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Didier Bouvet, Maher Kayal, Vincent Pott, Mihai Adrian Ionescu, Cédric Meinen, Kirsten Emilie Moselund

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS ...

2008

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