Kirsten Emilie Moselund

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Publications associées (53)

Fabrication of silicon nano wires and gate-all-around MOS devices

Didier Bouvet, Kirsten Emilie Moselund

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...

2007

Fault-Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays

Didier Bouvet, Yusuf Leblebici, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Giovanni De Micheli, David Atienza Alonso, Mohamed Haykel Ben Jamaa

Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using mu ...

2007

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Mihai Adrian Ionescu, Kirsten Emilie Moselund

2006

Low temperature single electron characteristics in gate-all-around MOSFET

Didier Bouvet, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund

2006

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Didier Bouvet, Romuald Houdré, Vincent Pott, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Christoph Eggimann, Nicolas Le Thomas

2006

Compact gate-all-around silicon light modulator for ultra high speed operation

Michel Declercq, Mihai Adrian Ionescu, Kirsten Emilie Moselund, Matthieu Bopp

2006

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Luc Thévenaz, Mihai Adrian Ionescu, Kirsten Emilie Moselund

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

IEEE2006