Paolo Giuseppe Dainesi

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This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multip ...

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

Annealing silicon at high temperatures in hydrogen ambiance has been reported to induce surface diffusion of silicon; in these conditions, adapted 2D arrays of trenches etched in Bulk Si are transformed into buried cavities creating suspended membranes. A ...

A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...

The reliability and charging/discharging dynamics of wideband (1.5-14GHz) phase shifters made of MEMS capacitive switches using Aluminum Nitride (AlN) as dielectric are originally reported. Phase shifter lifetimes exceeding 109 cycles are achieved in hot-cycling (+5dBm RF power). Dynamic tests were done for the first time under ambient conditions (5000 humidity) over 2x109 cycles with no major degradation of individual switches performances. It is demonstrated that the phase shifter is very robust (no perma

Two Mach-Zehnder interferometers (MZI), one with Y-junction-couplers and the other with multimode interference (MMI), were presented. Both MZI were developed in silicon-on-insulator (SOI) technology and used plasma dispersion effect for light phase modulation. Fiber-to-fiber insertion losses, absorption coefficients, optical coefficients modulated intensities as function of time and modulation extinction ratios versus signal frequencies were measured for these devices at various wavelengths. Both devices we

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.

An optical modulator is arranged to compensate for the thermo-optical modulating effects induced by charge-injection based phase modulators. It comprises first modulator means (3), that receive optical radiation (11, 21), direct it along an optical path, apply a first predetermined optical phase modulation by the injection of free charges into the optical path, and output optical radiation (13, 22) so modulated. Compensator means (4) apply, to optical radiation output from (13, 22), or to be received by, th

This paper reports on the design and fabrication of a fully integrated antenna beam steering concept for airborne applications at 17 GHz. The system is based on a single wafer process including a dipole antenna, a balun and a 2-bit distributed MEMS phase shifter (in a 7 x 3 mm high-resistivity-silicon dice). To our knowledge, it is the first time that such integration has been done. First results of individual devices are reported and simulations of the whole concept are originally presented. (C) 2009 Elsev

This paper presents a pressure sensor based on a variable capacitor formed by a movable polysilicon sealed membrane sensitive to pressure. When operated as a pressure sensor two operation regions are observed, an exponentially sensitivity region at low pre ...

This paper presents an in-depth study of the design, modelling, circuit parameter extraction and characterization of a distributed MEMS digital microwave phase shifter. Bridge-type digital capacitors periodically loaded on a 5 mm CPW (with an actuation vol ...

In this work, we evaluate the exploration of the Solar system by ad-hoc wireless sensor networks (WSN), i.e. networks where all nodes (either moving or stationary) can both provide and relay data. The two aspects of self-organization and localization are t ...

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integr ...

Paolo Giuseppe Dainesi

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A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

Silicon nanostructuring for 3D bulk silicon versatile devices

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric

Intensity modulation in two Mach-Zehnder interferometers using plasma dispersion in silicon-on-insulator

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect

An optical modulator

Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies

Scaling SOI photonics to micron and sub-micron devices

3-D integrable optoelectronic devices for telecommunications ICs

Compact gate-all-around silicon light modulator for ultra high speed operation

Compact gate-all-around silicon light modulator for ultra high speed operation