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Jean-Michel Sallese

Cette personne a quitté l’EPFL

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Publications associées (150)

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Size-selective diffusion in nanoporous alumina membranes for a glucose affinity sensor

Jean-Michel Sallese, Peter Ryser, Eric Meurville, Christophe Boss

The retention, diffusion and structural properties of 2–4 nm nanoporous alumina membranes were investigated in view of their integration as size-selective interface in a glucose sensor. These membranes exhibit remarkable glucose diffusion properties with o ...

Elsevier2012

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Mihai Adrian Ionescu, Jean-Michel Sallese, Didier Bouvet, Mohammad Najmzadeh, Wladyslaw Grabinski

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Elsevier2012

Partitioning Schemes in the Lateral Asymmetric MOST

Mihai Adrian Ionescu, Christian Enz, Jean-Michel Sallese, Michel Declercq, Ananda Sankar Roy, Yogesh Singh Chauhan

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

2006

Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella, Chiara Rossi

We present a lumped devices network approach to simulate surface recombination effects in optoelectronics devices. The network is composed of generalized lumped devices where the excess carrier concentrations and gradients are mapped on electrical quantiti ...

IEEE2018

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

Jean-Michel Sallese, Didier Bouvet, Georgi Gorine

The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...

2019

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jean-Michel Sallese, Arnout Lodewijk M Beckers, Farzan Jazaeri, Seyed Armin Tajalli

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...

2010

A circuit-level substrate current model for smart-power ICs

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...

Institute of Electrical and Electronics Engineers2010

Detachable and Portable Moisture Sensors for Industrial Applications

Jean-Michel Sallese

This paper presents the design, fabrication and testing of an innovative moisture analyzer with a detachable and portable moisture sensor, which can compensate for both bulk density and temperature effects, thus allowing to detect the moisture content in g ...

Institute of Electrical and Electronics Engineers2024

Evaluation of characteristic parameters for high performance hall cells

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the genera ...

Elsevier Sci Ltd2014

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the auth ...

Hindawi Publishing Corporation2013

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

Maher Kayal, Jean-Michel Sallese

In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a cons ...

2008

Circuit Level Modeling Methodology of Parasitic Substrate Current Injection from a High-Voltage H-bridge at High Temperature

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

In this paper, a modeling methodology is validated based on an enhanced model of the diode, that we have developed to simulate substrate current coupling mechanisms on a typical H -bridge structure. An equivalent schematic based on an enhanced model of the ...

2011

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Christian Enz, Jean-Michel Sallese, Rolando Ferrini, Randoald Müller, Frédéric Zanella, Nenad Marjanovic

Sub-micrometer channel length (0.5 mu m) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4- ...

Elsevier2013

Compact Model for Continuous Microfluidic Mixer

Jean-Michel Sallese

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

IEEE2020

Non Quasi-Static Model of DG Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

2024

Nanowire junctionless ISFET noise model in Verilog-A

Jean-Michel Sallese, Ashkhen Yesayan

In this paper, we validate the Verilog-A implementation of the nanowire ISFET model. Based on the developed code and EKV formalism, the flicker noise of the nanowire ISFET was studied. The Verilog-A code was validated by comparing the data obtained from th ...

2024

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

Institute of Electrical and Electronics Engineers2013

Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper, we present an analytical semiempirical model of the profile of the channel charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is based on the premise of separating the charge density in the quasi-ballistic cha ...

Ieee-Inst Electrical Electronics Engineers Inc2014