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Jean-Michel Sallese

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Publications associées (155)

CJM: A Compact Model for Double-Gate Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

2019

FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1

Manuel Bauer, Luca Rossi, Thomas Rizzo, François Robert, Jean-Michel Sallese, Pierluigi Bruzzone, Benedikt Moser, Mikhail Chapochnikov, Bernhard Auchmann, Jeffrey Alan Hubbell, Nicolas Andreini, Alban Sublet, Anatole von Lilienfeld, Mathias Oleg Knecht, Yu Bai, Jorg Wenninger, Michele Cascella, Marc-Olivier Sauvain, Tatiana Pieloni, Pablo Marcelo Perez Garcia, Rui Ning Wang, Leonid Rivkin, Hua Zhang, Xavier Buffat, Mingkui Wang, Andrea Wulzer, Martin Vogel, Nathalie Sophie Adeline Serra, Sandra Aumon, Alexandra Sarabando de Carvalho, Roberto Franceschini, Karin Irmgard Löw, Lucia Jimenez Rojo, Jie Gao, Giuseppe Montenero, Marco Drewes, Craig Nowell, Peter Michael Vogel, Shourya Dutta Gupta, Jairo Camilo Quijano Perez, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements

Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino

Recently a new technique based on capacitive sensing has been developed and used to estimate the amount of moisture in polymers by means of the deviation of the dielectric constant. This technique is expected to be used for in-line monitoring of aggregate ...

IEEE2019

FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

Manuel Bauer, Luca Rossi, François Robert, Jean-Michel Sallese, Pierluigi Bruzzone, Mikhail Chapochnikov, Bernhard Auchmann, Alban Sublet, Mathias Oleg Knecht, Yu Bai, Jorg Wenninger, Tatiana Pieloni, Leonid Rivkin, Hua Zhang, Xavier Buffat, Andrea Wulzer, Martin Vogel, Sandra Aumon, Alexandra Sarabando de Carvalho, Giuseppe Montenero, Marco Drewes, Doohyun Kim, Frank Zimmermann, José Luis Abelleira Fernández, Alexej Grudiev, Fabio Avino, Massimo Giovannozzi, Patrik Gonçalves Jorge, Francesco Cerutti, Javier Barranco Garcia, Roberto Contino, Rudiger Schmidt, Claudia Tambasco, Michael Schenk, Yi Zhang, Agnieszka Chmielinska, Luca Bottura, Lotta Maria Mether, Mithlesh Kumar, Vincenzo D'Auria, Sondre Vik Furuseth, , , , , ,

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Matthias Bucher, Christian Enz, François Krummenacher, Christophe Lallement, Jean-Michel Sallese, Eric Vittoz, Wladyslaw Grabinski

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...

IEEE2019

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

Didier Bouvet, Jean-Michel Sallese, Georgi Gorine, Federico Ravotti

The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...

2019

Charge-based Model for Junction FETs

Jean-Michel Sallese, Ali Saeidi

2018

Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

Jean-Michel Sallese

2018

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part II: Total Charges and Transcapacitances

Jean-Michel Sallese

2018

Principle of the electrically induced Transient Current Technique

Jean-Michel Sallese

2018

Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

Jean-Michel Sallese

2018

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci, Chiara Rossi

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Christophe Lallement, Jean-Michel Sallese, Wladyslaw Grabinski

The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and ...

IEEE2018

Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

Jean-Michel Sallese, Pietro Buccella, Camillo Stefanucci, Chiara Rossi

We present a lumped devices network approach to simulate surface recombination effects in optoelectronics devices. The network is composed of generalized lumped devices where the excess carrier concentrations and gradients are mapped on electrical quantiti ...

IEEE2018

High Precision Capacitive Moisture Sensor for Polymers

Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino

This paper presents a high precision capacitive moisture sensor for polymers that is part of a compact, fast, and economic moisture analyzer capable of reaching similar precision than commercial moisture analyzers based on the Karl Fischer method. The desi ...

IEEE2018

Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

2018

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Jean-Michel Sallese, Alessandro Mapelli

In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic ...

Institute of Physics2016

A new constituent of electrostatic energy in semiconductors

Jean-Michel Sallese

The concept of electric energy is revisited in detail for semiconductors. We come to the conclusion that the main relationship used to calculate the energy related to the penetration of the electric field in semiconductors is missing a fundamental term. Fo ...

EDP Sciences, Springer2016

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Giovanni Migliorati

Andrea Thamm

Florian Patrick Marie Daniel De la Barre De Nanteuil

Andrey Denisov

Doohyun Kim

Frank Zimmermann

José Luis Abelleira Fernández

Alexej Grudiev

Philippe Schwaller

Fabio Avino

Darius Constantin Merk

Massimo Giovannozzi

Arturo Rivetti

Patrik Gonçalves Jorge

Francesco Cerutti

Ting-Yu Lee

Dragos-Adrian Seredinschi

Leonid Kahle

Juan Federico Esteban Müller

Javier Barranco Garcia

Roberto Contino

Eva Maria Rodriguez Franco

Beat Mueller

Rudiger Schmidt

Claudia Tambasco

Abdel Perez Hernandez

Shang-Jung Wu

José Luis Rivera Gutiérrez

Agnieszka Chmielinska

Lorena Gonçalves de Alcântara e Freitas Krikler

Candice Megan T Young

Rafael Amorim Leandro De Castro Amoedo

Xingyu Wu

Amirhossein Saba Shirvan

Wanderson Oliveira Da Silva

Mukesh Kumar Tripathi

Léon Van Riesen-Haupt

We review the physics opportunities of the Future Circular Collider, covering its e(+)e(-), pp, ep and heavy ion programmes. We describe the measurement capabilities of each FCC component, addressing the study of electroweak, Higgs and strong interactions, ...

2019

Léon Van Riesen-Haupt

In response to the 2013 Update of the European Strategy for Particle Physics (EPPSU), the Future Circular Collider (FCC) study was launched as a world-wide international collaboration hosted by CERN. The FCC study covered an energy-frontier hadron collider ...

2019