Publications by Jean-Michel Sallese

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The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in ...

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

The retention, diffusion and structural properties of 2–4 nm nanoporous alumina membranes were investigated in view of their integration as size-selective interface in a glucose sensor. These membranes exhibit remarkable glucose diffusion properties with o ...

The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced i ...

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

We present a lumped devices network approach to simulate surface recombination effects in optoelectronics devices. The network is composed of generalized lumped devices where the excess carrier concentrations and gradients are mapped on electrical quantiti ...

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...

The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...

This paper presents an experimental study on the impact of total ionizing dose (TID) damage on free carrier mobility in a commercial 28 nm bulk CMOS technology, with exposure levels reaching up to 1 Grad. The analysis is based on a proposed, accurate methodology for extracting free carrier mobility, which assumes drift-diffusion transport in advanced field-effect transistors [1], [2]. Using this approach, we investigate the degradation of carrier mobility caused by Coulomb scattering from radiation-induced

This paper presents the design, fabrication and testing of an innovative moisture analyzer with a detachable and portable moisture sensor, which can compensate for both bulk density and temperature effects, thus allowing to detect the moisture content in g ...

The current work focuses on presenting specific Hall cells with high performance, and their corresponding parameters. The design, integration, measurements and model development for their performance assessment are necessary stages considered in the genera ...

In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the auth ...

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a cons ...

In this paper, a modeling methodology is validated based on an enhanced model of the diode, that we have developed to simulate substrate current coupling mechanisms on a typical H -bridge structure. An equivalent schematic based on an enhanced model of the ...

Sub-micrometer channel length (0.5 mu m) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4- ...

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

Jean-Michel Sallese

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Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Size-selective diffusion in nanoporous alumina membranes for a glucose affinity sensor

Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Partitioning Schemes in the Lateral Asymmetric MOST

Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

A circuit-level substrate current model for smart-power ICs

Gigarad Ionizing Radiation-Induced Carrier Mobility Degradation in 28 Nm Commercial Cmos

Detachable and Portable Moisture Sensors for Industrial Applications

Evaluation of characteristic parameters for high performance hall cells

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

Circuit Level Modeling Methodology of Parasitic Substrate Current Injection from a High-Voltage H-bridge at High Temperature

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Compact Model for Continuous Microfluidic Mixer