Gigarad Ionizing Radiation-Induced Carrier Mobility Degradation in 28 Nm Commercial Cmos

This paper presents an experimental study on the impact of total ionizing dose (TID) damage on free carrier mobility in a commercial 28 nm bulk CMOS technology, with exposure levels reaching up to 1 Grad. The analysis is based on a proposed, accurate methodology for extracting free carrier mobility, which assumes drift-diffusion transport in advanced field-effect transistors [1], [2]. Using this approach, we investigate the degradation of carrier mobility caused by Coulomb scattering from radiation-induced interface trapped charges. The study provides new insights into the physical mechanisms behind mobility reduction in deeply scaled nodes under high-dose radiation. The extracted mobility trends offer valuable benchmarks for reliability assessment and radiation-hardened design in nanoscale CMOS technologies.