Publications de Michel Declercq

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This paper presents a novel architecture for wireless communication systems made up of a base station and a remotely powered transponder. The architecture enables the base station to perform wireless voltage regulation (WVR) of the rectifier's output volta ...

This paper presents an inductive power link for remote powering of a wireless cortical implant. The link includes a Class-E power amplifier, a gate driver, an inductive link, and an integrated rectifier. The coils of the inductive link are designed and opt ...

The tribocorrosion behavior of tungsten sliding against an alumina ball was evaluated in sulfuric acid under applied electrode potential. Surface chemistry of worn and unworn surfaces was evaluated using XPS and AES. Quasi-potentiostatic polarization curve ...

The invention concerns a device for automatically and rapidly locating (10) a person or an object at sea in poor meteorological conditions, comprising a radio wave transmitting device (20) provided on the person or the object and a reception device (30), provided in a boat, and designed to receive directly said waves and to process them without any other intermediary than the radio link (40) established between them. The transmitting device (20) comprises a transmitter (21) supplied by a power source (23),

The impulse radio-ultra wide band (IR-UWB) signalling format has been an attractive mode for wireless communication in wireless sensor node system. The super-regenerative principle can be used for impulse reception for its inherent advantages. The oscillat ...

This paper presents the analysis of inductive links for remote powering of implantable devices and a method to improve the power link efficiency by modifying the geometrical parameters of planar spiral inductors. The analysis of the inductive links include ...

This article presents an inductive power link for a cortical implant. The link includes a Class-E power amplifier, an inductive link, a matching network, and a rectifier. The coils of the inductive link are designed and optimized for a distance of 10mm (scalp thickness). The power amplifier is designed in order to allow closed loop power control by controlling the supply voltage. A new packaging topology is proposed in order to position the implant in the skull, without occupying much area, but still obtain

This article presents the design of the inductive links of remotely powered wireless cortical implants for minimum interference from the power link to the data link. This interference is minimized by changing the orientation of the inductors. Different ori ...

The recent increase in the need for energy efficient wireless nodes have led to the study of various low power consumption receiver and transmitter architectures. The super-regenerative receiver architecture is one of the possible candidates for such a low ...

This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavio ...

This paper describes the design and implementation of a low-power superregencrative receiver front-end operating in the 2.4-GHz ISM band. Specifically, the design is conceived to support high quench frequencies and, consequently, high data rates. The front ...

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release ...

The invention concerns a device (10) for measuring one or several navigation parameters in a large-size navigating craft, comprising a parameter sensing and measuring element (11) and at least means for displaying (12) said parameter, connected by electromagnetic waves (13). The element (11) comprises a sensor (20) for measuring the parameter. The value of the measured physical quantity is successively processed by a low frequency processing unit (21), a digitizing unit (22) and a formatted by a microcontro

This paper presents a low-voltage low-power high-speed superregenerative receiver operating in the 2.4-GHz industrial-scientific-medical band. The receiver uses an architecture in which, thanks to the presence of a phase-locked loop, the quench oscillator ...

Lateral asymmetric MOSFET, which has longitudinal doping variation in the channel, is the core of high voltage MOSFET. Recently it has been recognized that capacitance property of this kind of device is fundamentally different from conventional MOST becaus ...

The substrate noise coupling problems in today's complex mixed-signal system-on-chip (MS-SOC) brings a new set of challenges for designers. In this paper, we propose a global methodology that includes an early verification in the design flow as well as a postlayout iterative optimization to deal with substrate noise, and helps designers to achieve a first silicon-success of their chips. An improved semi-analytical modeling technique exploiting the basic behaviors of this noise is developed. This method sign

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage operation and high-performance. It is demonstrated that the use of a thin gate oxide (

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproduci

In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-GD and C-GS capacitances of HV-MOS originate from lateral non-uniform doping. The drift region decreases the C-GD capacitance and increases the peaks in CGS and also gives rise to peaks in C-GG capacitances increasing with higher drain bias. It is also show

Michel Declercq

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Wireless Voltage Regulation for Passive Transponders Using an IF to Communicate

Inductive Power Link for a Wireless Cortical Implant With Two-Body Packaging

Effect of electrode potential on the tribocorrosion of tungsten

Dispositif de reperage d'un homme ou d'un objet dans un milieu liquide

A multi-band PLL based tuning circuitry for the super-regenerative IR-UWB receiver system

Improvement of power efficiency of inductive links for implantable devices

Inductive Power Link for a Wireless Cortical Implant with Biocompatible Packaging

Orthogonally oriented coils for minimization of cross-coupling in cortical implants

Noise analysis in super-regenerative receiver systems

Design and optimization of CMOS prescaler

A model for mu;-power rectifier analysis and design

A 2.4-GHz Low-Power Superregenerative RF Front-End for High Data Rate Applications

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

Dispositif de detection, de traitement et d'affichage de parametres physiques, notamment de parametres de navigation

An 11-Mb/s 2.1-mW Synchronous Superregenerative Receiver at 2.4 GHz

Partitioning Schemes in the Lateral Asymmetric MOST

Modeling techniques and verification methodologies for substrate coupling effects in mixed-signal system-on-chip designs

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

A novel RF MEMS technological platform

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs