Jean-François Carlin

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One-hundred-nanometer-gate (Al, In) N/GaN highelectron- mobility transistors (HEMTs) grown on semi-insulating SiC achieve a maximum current density of 1.84 A/mm at V-GS = 0 V, an extrinsic transconductance of 480 mS/mm, and a peak current gain cutoff frequ ...

The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequ ...

Growth temperatures between 450 and 520 degrees C and V/III ratios of 2-8 were explored to optimize the crystalline quality and the transport properties of compressively strained InxGa1-xAs/InP heterostructures (0.53 < x < 1). 77 K Hall mobilities as high as 118000 cm(2) V-1 s(-1) with n(s) = 1.4 x 10(12) cm(-2) were measured on structures incorporating an In0.8Ga0.2As channel grown with optimized conditions.

In the last decade, aluminum nitride (AlN) has proven to be an attractive material for both linear and nonlinear integrated photonics, due to its large transparency window, its low propagation losses and the presence of both second- and third-order nonline ...

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

With the aim of increasing the efficiency of green and blue light-emitting diodes, we investigate the luminescence of InGaN/GaN quantum wells on structured GaN buffer layers. ...

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

We present a monolithically integrated coupled cavity vertical cavity surface emitting laser or BiVCSEL: this two-terminal electrically injected device exhibits stable laser emission at two design wavelengths simultaneously. The coupling between the two monolithically grown cavities leads to two distinct Fabry-Perot modes whose separation and localization are designed in such a way that the interaction between the two modes leads to dual laser emission. Simultaneous lasing at 925 nm and 955 nm is achieved e

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusion mechanism. (C) 1995 American Institute of Physics.

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a thresh ...

We report a novel three-contact coupled-vertical-cavity surface-emitting laser (VCSEL) for use in polarization-sensitive optical applications. The device consists in two vertical cavities, coupled by a common semitransparent mirror. We demonstrate that one can independently choose both the power of the output beam - through the current in the first cavity - and the polarization state - through the bias applied to the second cavity. The control of the polarization state is performed with a control of voltage

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

Jean-François Carlin

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Narrow UV emission from homogeneous GaN/AlGaN quantum wells

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Pseudomorphic InGaAs/In(Ga)P bidimensional electron gas grown by chemical beam epitaxy

On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Static and dynamic properties of multi-section InGaN-based laser diodes

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Modification of InGaN quantum well luminescence by microstructured buffer layers

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

BiVCSEL operation at 925 and 955 nm

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

Spontaneous polarization buildup in a room-temperature polariton laser

Interdiffusion Induced Enhancement of One-Dimensional Level Separation in Quantum Wires

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Investigation of polarization behavior in a vertical coupled-cavities surface-emitting laser

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes