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Anna Fontcuberta i Morral

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Related publications (286)

Nanowires for solar cell applications

We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. With careful choice of the growth parameters nanowires with length of several microns and diameters in the range of 20 nm up to 120 nm are obtained. By changing the g ...

IEEE2012

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

Anna Fontcuberta i Morral, Bernt Ketterer, Emanuele Uccelli

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy ...

2012

An Electrically-Driven GaAs Nanowire Surface Plasmon Source

Anna Fontcuberta i Morral, Carlo Colombo

Over the past decade, the properties of plasmonic waveguides have extensively been studied as key elements in important applications that include biosensors, optical communication systems, quantum plasmonics, plasmonic logic, and quantum-cascade lasers. Wh ...

American Chemical Society2012

Effect of the pn junction engineering on Si microwire-array solar cells

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Franz Michael Epple

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7 ...

Wiley-VCH Verlag2012

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

Anna Fontcuberta i Morral

We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order to probe the symmetry and energy structure of the valence band in the wurtzite segment ...

2012

Semiconductor Nanowires and Nanotubes: From Fundamentals to Diverse Applications

Anna Fontcuberta i Morral

1 School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 2 State Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing University of Technology, Nanjing, Jiangsu 210009, China 3Faculty ...

Hindawi Limited2012

Time-Resolved Photoinduced Thermoelectric and Transport Currents in GaAs Nanowires

Anna Fontcuberta i Morral

In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in single GaAs nanowire based circuits, we introduce an on-chip photocurrent pump-probe spectroscopy with a picosecond time resolution. We identify photoinduced t ...

American Chemical Society2012

Low-Temperature Preparation of Tailored Carbon Nanostructures in Water

Raffaele Mezzenga, Vincent Laporte, Davide Demurtas, Anna Fontcuberta i Morral, Bernt Ketterer, Holger Frauenrath, Tobias Hoheisel, Ruth Szilluweit, Martin Fritzsche

The development of low-temperature carbonization procedures promises to provide novel nanostructured carbon materials that are of high current interest in materials science and technology. Here, we report a "wet-chemical" carbonization method that utilizes ...

American Chemical Society2012

LIGHT-MATTER INTERACTIONS Ultrastrong routes to new chemistry

Anna Fontcuberta i Morral, Francesco Stellacci

Nature Publishing Group2012

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Anna Fontcuberta i Morral, Martin Heiss, Bo Peng

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

American Chemical Society2012

Coherent control of electrical currents in semiconductor nanowires/‐tubes

Anna Fontcuberta i Morral

Quantum interference control of electrical currents is well established in bulk semiconductors. It arises from the interference of one‐ and two‐photon absorption pathways. Here, the concept is transferred to one‐dimensional semiconductor nanostructures. Fi ...

Wiley2011

III-V semiconductor nanowire solar cells

Anna Fontcuberta i Morral

This chapter reviews the implementation of semiconductor nanowires as the active optical elements of nanowire-based photovoltaics. Some essential principles for understanding the semiconductor p-n junction photoresponse are briefly covered, followed by a m ...

Bentham Science Publishers Ltd.2011

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

François Morier-Genoud, Gabriel Mugny, Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Eleonora Russo

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demons ...

American Chemical Society2011

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011

Phonon confinement and plasmon-phonon interaction in nanowire-based quantum wells

Anna Fontcuberta i Morral, Bernt Ketterer

Resonant Raman spectroscopy is realized on closely spaced nanowire-based quantum wells. Phonon quantization consistent with 2.4-nm-thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photolumin ...

2011

Engineering light absorption in single-nanowire solar cells with metal nanoparticles

Anna Fontcuberta i Morral, Carlo Colombo

Semiconductor nanowires (NWs) possess a fascinating ability to efficiently collect and trap light into a sub-wavelength volume due to the occurrence of leaky mode resonances. The same confinement ability is manifested by metal nanostructures thanks to the ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2011

Fundamental limits in the external quantum efficiency of single nanowire solar cells

Anna Fontcuberta i Morral, Martin Heiss

The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie resonances in the absorption of the solar spectrum for nanow ...

American Institute of Physics2011

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí

In this work electrolyte insulator semiconductor (EIS) structures based on lithographically fabricated Si SiO2 micropillars and pores are studied. The samples are characterized by means of impedance spectroscopy (IS) and they are compared to samples with a ...

Wiley2011

Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Anna Fontcuberta i Morral

Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. H ...

2011

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Bernt Ketterer

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-fie ...

2011

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