Publication

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Wonjong Kim, Luca Francaviglia, Lucas Güniat, Heidi Andrea Potts, Jelena Vukajlovic Plestina
2018
Conference Papers

Abstract

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, while 90 degrees allows for the nanowire thinning, followed by the stable growth of ultra-thin tops. We develop a model that explains the observed morphological evolution under the two different scenarios.

Official source

https://infoscience.epfl.ch/entities/publication/37b5cc9c-23f8-4a18-8efa-5481a06880b9

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Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

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