Anna Fontcuberta i Morral

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We demonstrate morphology-dependent second-harmonic generation (SHG) from InAs V-shaped nanomembranes. We show SHG correlation with the nano-wing shape and size, experimentally quantify the SHG efficiency, and demonstrate a maximum SHG enhancement of about ...

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core is a pr ...

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm ...

We review different strategies to achieve a three-dimensional energy bandgap modulation in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum structures, quantum dots (QDs), quantum wires (QWRs) and quantum wells (QWs). Starting wi ...

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

In order to clarify the temporal interplay of the different photocurrent mechanisms occurring in single GaAs nanowire based circuits, we introduce an on-chip photocurrent pump-probe spectroscopy with a picosecond time resolution. We identify photoinduced t ...

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7 ...

Surface recombination represents a handicap for high-efficiency solar cells. Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is grea ...

Raw data associated with the publication "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning", first published in Nanoscale Advances on the 23nd November 2020. ...

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

The thermal properties of freely suspended GaAs nanowires are investigated by applying a method which relies on laser heating and the determination of the local temperature by Raman spectroscopy. In order to determine the values for the thermal conductivit ...

We image the remnant magnetization configurations of CoFeB and permalloy nanotubes (NTs) using x-ray magnetic circular dichroism photoemission electron microscopy. The images provide direct evidence for flux-closure configurations, including a global vorte ...

Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categorie ...

Cathodoluminescence scanning electron microscopy (CL-SEM) data and spectrum as decribed in the main text and supporting information to the publication ...

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

Anna Fontcuberta i Morral

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Enhanced second harmonic generation from InAs nano-wing structures on silicon

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Ale,Ga)N core-shell nanowires

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Time-Resolved Photoinduced Thermoelectric and Transport Currents in GaAs Nanowires

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Effect of the pn junction engineering on Si microwire-array solar cells

Field-effect passivation on silicon nanowire solar cells (vol 8, pg 673, 2015)

Dataset for "Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning"

Optical properties and carrier dynamics in Co-doped ZnO nanorods (vol 3, pg 214, 2021)

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

Imaging magnetic vortex configurations in ferromagnetic nanotubes

Semiconductor Nanowires: To Grow or Not to Grow?

MATERIALS SCIENCE How crystals get an edge

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE