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Anna Fontcuberta i Morral

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Related publications (286)

Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Pierre Michel Corfdir, Anna Fontcuberta i Morral, Emanuele Uccelli

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-ble ...

American Institute of Physics2013

Reversal Mechanism of an Individual Ni Nanotube Simultaneously Studied by Torque and SQUID Magnetometry

Anna Fontcuberta i Morral, Eleonora Russo, Dirk Grundler

Using an optimally coupled nanometer-scale SQUID, we measure the magnetic flux originating from an individual ferromagnetic Ni nanotube attached to a Si cantilever. At the same time, we detect the nanotube's volume magnetization using torque magnetometry. ...

American Physical Society2013

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Anna Fontcuberta i Morral, Carlo Colombo, Martin Heiss, Alberto Casadei

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via th ...

American Institute of Physics2013

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Pierre Michel Corfdir, Anna Fontcuberta i Morral, Emanuele Uccelli, Sonia Conesa Boj

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

Amer Chemical Soc2013

Self-assembled quantum dots in a nanowire system for quantum photonics

Marco Cantoni, Yannik Fontana, Anna Fontcuberta i Morral, Martin Heiss, Bernt Ketterer, Sonia Conesa Boj, Eleonora Russo, Nicola Marzari

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

Single-nanowire solar cells beyond the Shockley-Queisser limit

Anna Fontcuberta i Morral, Martin Heiss

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queiss ...

Nature Publishing Group2013

Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Sonia Conesa Boj

We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

American Physical Society (APS)2013

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Gözde Tütüncüoglu, Sonia Conesa Boj, Esther Alarcon Llado, Eleonora Russo, Ignasi Canales Mundet

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj, Esther Alarcon Llado

Thanks to their wide band structure tunability, GaAs1-xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their ...

Institute of Physics2013

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Shruti Thombare, Anna Fontcuberta i Morral

The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapo ...

American Institute of Physics2013

Enhanced second harmonic generation from InAs nano-wing structures on silicon

Anna Fontcuberta i Morral, Anna Dalmau Mallorquí, Eleonora Russo, Ignasi Canales Mundet

We demonstrate morphology-dependent second-harmonic generation (SHG) from InAs V-shaped nanomembranes. We show SHG correlation with the nano-wing shape and size, experimentally quantify the SHG efficiency, and demonstrate a maximum SHG enhancement of about ...

Royal Society of Chemistry2013

Advances in the theory of III-V nanowire growth dynamics

Anna Fontcuberta i Morral

Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various a ...

Institute of Physics2013

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Anna Fontcuberta i Morral, Carlo Colombo, Martin Heiss, Anna Dalmau Mallorquí, Pierre Loïc Blanc

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

Inderscience2013

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Anna Fontcuberta i Morral

Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...

Elsevier2013

Enhancement of Second Harmonic Signal in Nanofabricated Cones

Aleksandra Radenovic, Anna Fontcuberta i Morral, Martin Heiss, Fabrizia Dutto, Andrea Lovera, Oriol López Sánchez

Geometrical effects in optical nanostructures on nanoscale can lead to interesting phenomena such as inhibition of spontaneous emission,(1,2) high-reflecting omnidirectional mirrors, structures that exhibit low-loss-waveguiding,(3) and light confinement.(4 ...

2013

Pressure Tuning of the Optical Properties of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of t ...

American Chemical Society2012

Cantilever Magnetometry of Individual Ni Nanotubes

Anna Fontcuberta i Morral, Eleonora Russo, Dirk Grundler

Recent experimental and theoretical work has focused on ferromagnetic nanotubes due to their potential applications as magnetic sensors or as elements in high-density magnetic memory. The possible presence of magnetic vortex states-states which produce no ...

Amer Chemical Soc2012

Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

Anna Fontcuberta i Morral, Martin Heiss, Daniel Rüffer, Eleonora Russo, Dirk Grundler

Defined magnetization states in magnetic nanotubes could be the basic building blocks for future memory elements. To date, it has been extremely challenging to measure the magnetic states at the single-nanotube level. We investigate the magnetization state ...

Royal Soc Chemistry2012

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Anna Fontcuberta i Morral, Lionel Michelet, Martin Heiss, Emanuele Uccelli, Eleonora Russo

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by chan ...

2012

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Sonia Conesa Boj, Eleonora Russo, Ludovit Pavel Zweifel

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

American Chemical Society2012

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