Anna Fontcuberta i Morral

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We demonstrate the fabrication of horizontally aligned and well-defined nanopore structures by anodic oxidation of aluminum thin films and micro stripes on a Si substrate. We are able to control both, the pore diameters and interpore distances from 10 rim ...

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

We describe the use of grown nanowires as scanning directional force sensors. Two orthogonal flexural modes are used to demonstrate vectorial sensing of electric and magnetic fields. Furthermore, we show that the modes can be strongly coupled by demonstrat ...

(S) TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells synthe ...

Semiconductor nanowires are promising building blocks for next generation solar energy conversion at low cost, due to their large absorption cross-sections. Here, the understanding of their absorption power is explored via computational and experimental me ...

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

We show that optically active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, th ...

We propose two novel solar cell designs, tapping the advantages of semiconductor nanowires. A silicon (Si) tandem cell can be achieved by growing sub-5 nm p-n junction in the radial direction of the Si nanowires on a planar crystalline Si cell. For series ...

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, whil ...

Magnetic nanotubes (NTs) are interesting for magnetic memory and magnonic applications. We report magnetotransport experiments on individual 10 to 20 mu m long Ni and CoFeB NTs with outer diameters ranging from 160 to 390 nm and film thicknesses of 20 to 4 ...

Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowire ensembles were measured. The small linewidth ...

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that e ...

The synthesis and properties of catalyst-free III-V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. F ...

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

Zn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical ...

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitiv ...

In this work we present a method to quantitatively measure the optical absorption of single nanowires that can be applied over a wide range of temperatures and with a high enough sensitivity to enable the measurement of below-band-gap absorption (as well a ...

Anna Fontcuberta i Morral

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Microstructured Horizontal Alumina Pore Arrays as Growth Templates for Large Area Few and Single Nanowire Devices

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Coherent Dynamics of Nanowire Force Sensors

(S)TEM tomography of AlAs-GaAs coaxial Nanowires

Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion

Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

Control of Ge island coalescence for the formation of nanowires on silicon

Quantum Dot Opto-Mechanics in a Fully Self-Assembled Nanowire

General theoretical considerations on nanowire solar cell designs

Lattice-mismatched monolithic GaAs/inGaAs two-junction solar cells by direct wafer bonding

Anisotropic magnetoresistance of individual CoFeB and Ni nanotubes with values of up to 1.4% at room temperature

Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Dataset for "Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor"

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Plasmonic Waveguide-Integrated Nanowire Laser

Measuring the Optical Absorption of Single Nanowires