Publication

Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy

Anna Fontcuberta i Morral
2008
Book Chapters

Abstract

The synthesis and properties of catalyst-free III-V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. Finally, the excellent structure and ultra-high purity are presented by Raman and Photoluminescence spectroscopy.

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Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy

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