Dataset for "Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor"

Zn3As2 is a promising earth‐abundant semiconductor material. Its bandgap, around 1 eV, can be tuned across the infrared by alloying and makes this material suited for applications in optoelectronics. Here, we report the crystalline structure and electrical properties of strain‐free Zn3As2 nanosails, grown by metal‐organic vapor phase epitaxy. We demonstrate that the crystalline structure is consistent with the P42/nmc (D4h15) α”‐Zn3As2 metastable phase. Temperature‐dependent Hall effect measurements indicate that the material is degenerately p‐doped with a hole mobility close to 103 cm2V-1s-1. Our results display the potential of Zn3As2 nanostructures for next generation energy harvesting and optoelectronic devices.