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Nicolas Grandjean

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Related publications (249)

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Noelia Vico Triviño

IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...

Amer Chemical Soc2015

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Denis Martin, Nicolas Grandjean, Marco Malinverni

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to similar to 10(20) cm(-3), thanks to the low growth temperature. This allows for the realization of p-n juncti ...

Amer Inst Physics2015

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Jean-François Carlin, Nicolas Grandjean, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

Amer Inst Physics2014

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014

Biexcitonic molecules survive excitons at the Mott transition

Jean-François Carlin, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Mehran Shahmohammadi, Georg Rossbach, Gwénolé Jean Jacopin

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Gatien Cosendey, Nicolas Grandjean, Ehsan Hashemi

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Optical Soc Amer2014

Leakage mechanisms in InAlN based heterostructures

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Marlene Glauser, Christian Mounir, Georg Rossbach

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

Interaction between meta-materials and shallow donors in bulk GaN at THz frequency

Jérôme Faist, Nicolas Grandjean, Etienne François Olivier Giraud

We report the coupling and interaction between shallow donors and microcavities in bulk GaN at THz frequencies. At 4K, the shallow donors lead to an absorption at 23.5 meV (5.7 THz) under optical pumping above the bandgap of GaN. The microcavities are base ...

Optical Soc Amer2014

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Vincenzo Savona, Jean-François Carlin, Nicolas Grandjean, Matteo Galli, Raphaël Butté, Noelia Vico Triviño, Momchil Minkov

Photonic crystal point-defect cavities were fabricated in a GaN free-standing photonic crystal slab. The cavities are based on the popular L3 design, which was optimized using an automated process based on a genetic algorithm, in order to maximize the qual ...

American Institute of Physics2014

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Daniel Marti, Jean-François Carlin, Nicolas Grandjean, Etienne François Olivier Giraud, Marco Malinverni, Lorenzo Lugani

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Amer Inst Physics2014

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

Amer Inst Physics2013

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Jean-François Carlin, Gatien Cosendey, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Marlene Glauser, Georg Rossbach

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Jean-François Carlin, Nicolas Grandjean

We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

Iop Publishing Ltd2013

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Jean-François Carlin, Marcel Py, Denis Martin, Nicolas Grandjean, Lorenzo Lugani

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...

Amer Inst Physics2013

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Nicolas Grandjean, Pierre Michel Corfdir, Etienne François Olivier Giraud, Mehran Shahmohammadi

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain

Gatien Cosendey, Nicolas Grandjean, Ehsan Hashemi

In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers (VCSELs) a dielectric aperture is generally used in combination with an indium-tin-oxide (ITO) layer on the top intracavity p-contact layer. The most straig ...

Iop Publishing Ltd2013

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