Publication

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Dobri Simeonov
2006
Journal Articles

Abstract

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of the V/III ratio on the QD height, shape, and density is studied. Emissions above (3.8 eV) and below (2.8 eV) the band gap of GaN are observed for small dots (1.3 nm) and large ones (4.4 nm), respectively. Special emphasis was given to the SK growth mode transition and the parameters influencing the QD formation. The two-dimensional-three-dimensional transition is studied continuously by photoluminescence mapping showing its high sensitivity to the V/III ratio. (C) 2006 American Institute of Physics. (C) 2006 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/e41096ef-f5d1-4099-b960-9ee275dbb202

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Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Dobri Simeonov
2006
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/e41096ef-f5d1-4099-b960-9ee275dbb202

About this result

Related concepts (10)

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

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