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Nicolas Grandjean

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Related publications (249)

Method for labeling products with a transparent photoluminescent label, and transparent photoluminescent label

A method for marking a product (1) with a photoluminescent mark, said mark comprising a photoluminescent portion (10) which is transparent under normal light conditions and revealed by photoluminescence under UV illumination, said mark further comprising a ...

2017

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Vincenzo Savona, Jean-François Carlin, Romuald Houdré, Nicolas Grandjean, Matteo Galli, Momchil Minkov, Mohamed Sabry Abdel-Aliem Mohamed

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitat ...

2017

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas, Kanako Shojiki

The mechanisms contributing to experimental quality factors of shortwavelength (lambda = 440-480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and qu ...

Amer Physical Soc2017

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Denis Martin, Nicolas Grandjean, Pirouz Sohi

Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

2017

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Benoît Marie Joseph Deveaud, Nicolas Grandjean, Raphaël Butté, Mehran Shahmohammadi, Georg Rossbach, Lise Lahourcade, Gwénolé Jean Jacopin, Wei Liu

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Amer Physical Soc2017

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Camille Haller, Gwénolé Jean Jacopin

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

Propagating Polaritons in III-Nitride Slab Waveguides

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Joachim Armand Simonne Ciers

We report on III-nitride waveguides with c-plane GaN/(Al,Ga)N quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal-mode splitting as large as 60 meV at low temperatures thanks to the large overla ...

American Physical Society (APS)2017

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Gediminas Liaugaudas

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Spie-Int Soc Optical Engineering2016

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Jean-François Carlin, Benoît Marie Joseph Deveaud, Nicolas Grandjean, Gwénolé Jean Jacopin, Wei Liu

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

Amer Inst Physics2016

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having too slow thermal emission rates to be detected by other deep level spectroscopy techniques. We will ...

Amer Inst Physics2016

GaN-based superluminescent diodes with long lifetime

Jean-François Carlin, Nicolas Grandjean, Antonino Francesco Castiglia

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their r ...

Spie-Int Soc Optical Engineering2016

Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth

Denis Martin, Nicolas Grandjean, Nils Asmus Kristian Kaufmann, Lise Lahourcade

We discuss the impact of kinetics, and in particular the effect of the Ehrlich-Schwobel barrier (ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of an ESB can lead to various self-assembled surface features, which stron ...

Elsevier Science Bv2016

Far-field coupling in nanobeam photonic crystal cavities

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Ian Michael Rousseau, Irene Sánchez Arribas

We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal p ...

Amer Inst Physics2016

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Denis Martin, Nicolas Grandjean, Hironori Okumura

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

Amer Inst Physics2016

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Denis Martin, Nicolas Grandjean, Marco Malinverni, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Benoît Marie Joseph Deveaud, Nicolas Grandjean, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Amer Physical Soc2016

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Denis Martin, Nicolas Grandjean, Marco Rossetti, Antonino Francesco Castiglia, Marco Malinverni, Camille Haller

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Denis Martin, Julien Dorsaz, Nicolas Grandjean, Marco Rossetti, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

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