Publication

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Antonino Francesco Castiglia
2008
Journal Articles

Abstract

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene-glycol is described. Leakage currents decrease of more than a factor of 10 and are completely suppressed in most of devices.

Official source

https://infoscience.epfl.ch/entities/publication/14a7b707-16f4-4c18-b117-1d3774296e34

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Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

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