Publication

Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund
2009
Conference Papers

Abstract

We report for the first time the optimization of the channel lateral strain profile as a new technological booster for improved performance of multi-gate n-channel MOSFET. We find that quasi-uniform or flat-Gaussian-close-to-the-drain profiles are optimum for the Ion boosting of sub-50nm scaled MOSFETs, while the penalty on Ioff and subthreshold slope is minimum. The reported predictions use realistic lateral uniaxial strain profiles, with peaks up to few GPa's and average values of hundreds of MPa's. ©2009 IEEE.

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https://infoscience.epfl.ch/entities/publication/0134d74b-38d2-49cb-9c12-4fd1ea5a1d73

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Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund
2009
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/0134d74b-38d2-49cb-9c12-4fd1ea5a1d73

About this result

Related concepts (16)

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

Transistor count

The transistor count is the number of transistors in an electronic device (typically on a single substrate or "chip"). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in the cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

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Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

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