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Mihai Adrian Ionescu

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Publications associées (403)

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for th ...

Elsevier Science Sa2014

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Yu Pu, Antonios Bazigos

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Partially gated lateral tunnel field effect transistor for optical applications

Mihai Adrian Ionescu, Nilay Dagtekin

Silicon-based partially gated tunnel FETs are characterized under optical and electrical excitation. Most significant outcomes of the experiments are (1) unique characteristics, namely, light induced negative transconductance and optically tunable output r ...

Amer Inst Physics2014

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Mihai Adrian Ionescu, Wladyslaw Grabinski, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Antonio Paone, Wolfgang Amadeus Vitale, Antonios Bazigos

IEEE2014

Junctionless nano-electro-mechanical resonant transistor

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch

A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respect ...

2014

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Technological development of high-k dielectric FinFETs for liquid environment

Didier Bouvet, Mihai Adrian Ionescu, Sara Rigante

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

Pergamon-Elsevier Science Ltd2014

Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the c ...

IEEE2014

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Daniel Grogg, Antonios Bazigos

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014

High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors

Mihai Adrian Ionescu, Laurent Syavoch Bernard, Hoël Maxime Guérin, Elizabeth Buitrago Godinez

This paper reports the successful experimental demonstration of the localized growth of horizontal, dense carbon nanotube (CNT) arrays in situ and at the wafer scale. The selectivity and directionality of the CNT catalytic growth process along with the ade ...

Pergamon-Elsevier Science Ltd2014

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Sara Rigante, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applie ...

IEEE2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

Mihai Adrian Ionescu, Daniel Grogg, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

The nanoscaled electrostatically actuated electromechanical ohmic switch is an emerging device with advanced performance in terms of ION/IOFF ratio. It is imperative that compact models accompany such novel devices in order to fully evaluate their potentia ...

Elsevier2014

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

Didier Bouvet, Mihai Adrian Ionescu, Sara Rigante

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

IEEE2014

Growth optimization of vanadium dioxide films on SiO2/Si substrates

Mihai Adrian Ionescu, Andreas Schueler, Antonio Paone, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale

2014

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

Mihai Adrian Ionescu, Arnab Biswas

In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On-Insu ...

2014

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

Julien Perruisseau-Carrier, Mihai Adrian Ionescu, Clara-Fausta Moldovan, Pankaj Sharma

The RF performance of a nanoelectromechanical systems (NEMS) capacitive switch based on graphene is evaluated. Our results show that graphene can be a good candidate for the membrane of RF NEMS switches in applications where low actuation voltage and fast ...

Institute of Electrical and Electronics Engineers2014

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

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