Mihai Adrian Ionescu

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-to-band tunneling (BTBT) leakage in the OFF state. In this work, we show that by using oppositely doped underlap regions; the unwanted penetration of the wavefunction into the underlap region at low gate biases is prevented; thereby drastically reducing the

There are several techniques for junction profiling available in literature, yet none of them are practically suitable for the accurate determination of the lateral junction steepness in TFET devices, which is the most important parameter influencing TFET ...

The lack of selectivity toward a particular analyte has always been the primary concern regarding CNT-based gas sensors. For that reason, in here we present a gas discrimination strategy that focuses on the electrode-CNT junction. The junction is shown to ...

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications an ...

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...

A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combinati

Switching behavior in electron-hole bilayer tunnel FETs is known to be unaffected by the subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the band-to-band tunneling phenomena on which they rely. However, in this paper, we show that, once parasitic lateral tunneling processes are suppressed by means of heterogate configurations, a new physical limitation arises at the onset of tunneling in this type of transistors, resulting from the interplay between field-induced quantum c

In this work a quasi-analytical physical model has been developed for the prediction of the potential in SiNW devices with arbitrary polygonal cross section. The model is then extended to the transport direction; a method for the calculation of the natural channel length has been proposed and validated by means of 2D and 3D numerical device simulations. With the results based on the proposed model it is possible to compare nanowires with cross sections of different shape and predict the minimum technologica

A fabrication method for silicon beams and membranes defined in lateral and vertical dimensions, as well as superposed silicon membranes, all realized in bulk silicon using only one lithographic step is proposed. This proposal is based on observations made ...

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified Double Gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lowering the Schottky Barrier Height (SBH). The series resistance and the barrier have been extracted using an external series resistance method and Arrhenius plots, respectively. Series resistances as low as 400 Omega.mu m for V-G>V-T and SBH of 0.1eV at V-

We report a thorough investigation of the electrically-induced metal-insulator transition in vanadium dioxide (VO2) for abrupt switching in 2-terminal devices (0.24 mV/dec at 25 °C, 0.38 mV/dec at 50 °C). We exploit the electrothermal actuation model based ...

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

This paper proposes, for the first time, the investigation of the SG-FET small slope switch based on a hybrid numerical simulation approach combining ANSYS (TM) Multiphysics and ISE-DESSIS (TM) in a self-consistent system. The proposed hybrid numerical simulations uniquely enables the investigation of the physics of complex Micro-Electro-Mechanical/solid-state devices, such as SG-FET. Abrupt switching and effect of gate charges are demonstrated. The numerical data serves to calibrate an analytical EKV-based

Mihai Adrian Ionescu

Chat with Graph Search

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

Carbon nanotube gas sensor array for multiplex analyte discrimination

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

Fabrication of MEMS Resonators in Thin SOI

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters