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Mihai Adrian Ionescu

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Related publications (403)

Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform

Maher Kayal, François Krummenacher, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Naser Khosro Pour, Elizabeth Buitrago Godinez

We present the design considerations of an autonomous wireless sensor and discuss the fabrication and testing of the various components including the energy harvester, the active sensing devices and the power management and sensor interface circuits. A com ...

Springer2014

Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM

Mihai Adrian Ionescu, Arnab Biswas

IEEE2014

Junctionless Silicon Nanowire Resonator

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch, Maren Arp

The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this study, we demonstrate a novel double-transduction principle for silicon nanowire resonators which exploits the ...

2014

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Wladyslaw Grabinski, Luca De Michielis, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos, Cem Alper

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

3d nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication

Mihai Adrian Ionescu, Ji Cao

A 3D M-CNT structure with at least one tri-state CNT NEM switch comprising at least an electrode as a source, an electrode as a gate and an electrode as a drain, a conductive carbon nanotube which is able to take three positions depending on a voltage appl ...

2013

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Cem Alper, Pierpaolo Palestri

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Josef Weber

2013

Ferroelectric tunnel fet switch and memory

Mihai Adrian Ionescu

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...

2013

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Luca Selmi, Arnab Biswas, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Ultra low power NEMFET based logic

Mihai Adrian Ionescu, Antonios Bazigos, Surya Shankar Dan

In this paper, we introduce a Nano-Electro-Mechanical Field Effect Transistor (NEMFET) based logic family tailored to the implementation of low speed and ultra low energy functional units and processors. Basic Boolean gates implemented with NEMFETs only ar ...

IEEE2013

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

Mihai Adrian Ionescu, Wladyslaw Grabinski, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos

IEEE2013

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized f ...

IEEE2013

RF MEMS power sensors for ultra-low power wake-up circuit applications

Catherine Dehollain, Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonios Bazigos

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first ...

IEEE2013

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Didier Bouvet, Mihai Adrian Ionescu, Mohammad Najmzadeh

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled s ...

Elsevier Science Bv2013

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Matthieu Berthomé, Elizabeth Buitrago Godinez

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through function ...

Elsevier2013

Horizontal growth of dense carbon nanotube membranes for interconnects and sensors

Mihai Adrian Ionescu, Hoël Maxime Guérin

Dense array of horizontal carbon nanotubes (CNTs) connected to electrodes is a basic building block for devices in a wide field of applications such as interconnect lines or micro-electromechanical systems (MEMS) for sensing for instance. For interconnects ...

2013

High-k dielectric FinFETs towards Sensing Integrated Circuits

Didier Bouvet, Mihai Adrian Ionescu, Sara Rigante

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrica ...

IEEE2013

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Jean-Michel Sallese, Mihai Adrian Ionescu, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deple ...

Institute of Electrical and Electronics Engineers2012

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