Publications by Igor Stolichnov

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The integration of ferroelectric polymer gates on a Mn-doped GaAs magnetic channel provides a promising route for the persistent field-effect control of magnetic properties in high-quality diluted magnetic semiconductors (DMSs) that are otherwise incompatible with traditional oxide ferroelectrics. That control demands the thinnest possible DMS layers, for which to date the Curie temperature (T-C) is severely depressed. Here we show that reducing the channel thickness from 7 to 3-4 nm by etching, followed by

Fatigued state of the Pt-PZT-Pt system is studied by means of low-temperature conduction measurements. It is shown that the conduction in the temperature interval of 100-140 degrees K is determined by the cold field emission of electrons (tunneling conduction mechanism). The Fowler-Nordheim equation describes well the observed current-voltage relations for reasonable values of the system parameters. The conduction measurements in this regime show that the strong fatigue of the switching polarization provoke

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

A comprehensive study of: leakage conduction in Pb(ZrxTi1-x)O-3 films with Pt electrodes is carried out. The conduction properties of films prepared in different ways (sol-gel coating, metalorganic chemical vapor deposition, sputtering) were studied by using different experimental techniques including variation of the applied voltage profile, photoassisted measurements, measurements at elevated temperatures, and variation of the prehistory of the samples. Based on the collective data, it is concluded that t

The switching kinetics in ferroelectric thin films has been intensively studied during the past decade. It is widely accepted that this kinetics is basically governed by the dynamics of domain coalescence (the Kolmogorov-Avrami-Ishibashi model). This conclusion is mainly supported by fitting the time dependence of the switching currents to that predicted by this model, the fit being typically performed in a 1-2 decade interval of time. The present paper reports on a study of the switching kinetics in modifi

Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at sub-micron scale. One of the fundamental obstacles impeding implementation of such devices is associated with the unfavorable relation between the dielectric constants of the classical oxide ferroelectrics and semiconductors. In the present work we demons

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kinetics describes correctly switching in single crystals but does not work properly for thin ferroelectric films used for memory applications. Recently an alternative approach based the on statistics of nucleation of the reversed polarization domain has been

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is controlled by charge to breakdown (Q(BR)) rather than the voltage applied to the capacitor. The QBR value for the asymmetrical Pt/SrRuO3/PZT/Pt capacitors is found to be much higher that for the Pt/PZT/Pt system. Polarization fatigue caused by bipolar volt

We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hysteretic current-voltage static characteristics of a fully depleted silicon-on-insulator transistor, with 40 nm vinylidene fluoride trifluorethylene, and 10 nm SiO2 gate stack, are measured from 300 to 400 K. In contrast with conventional MOS field effect transis

Direct observation of polarization distribution at nanoscale by scanning force microscopy across partially etched Pb(Zr,Ti)O-3 film ferroelectric capacitors with size 2x3 mum and preferential orientation (111) has revealed an anomalous polarization pattern characterized by polarization inversion in the center of the capacitor. This self-structured pattern is reproducible and independent on the spontaneous polarization orientation, but strongly influenced by the film texture and capacitor size. In particular

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows ...

This work demonstrates a multifunctional platform that integrates energy storage and multi-bit memory capabilities using multilayer structures composed of antiferroelectric (AFE) Si:HfO2 layers with interleaved dielectric (DE) layers. We have fabricated multilayer AFE/dielectric capacitors with ultrathin 1 nm Al2O3 DE layers between the functional 10 nm AFE layers with up to 4 layers of Al2O3 and 4 layers of AFE, exploiting the internal built-in electric fields, with energy storage density up to 50 J/cm3, a

Fatigue phenomena occurring in Pb(ZrxTi1-x)O-3 ferroelectric thin-film capacitors (FECAP) with Pt electrodes are studied by means of conduction measurements in the cold-field-emission (tunneling) regime. We have determined that conduction in virgin FECAPs is controlled by tunneling at temperatures 100-140 K and electric fields (2.3-3.0 MV/cm). The Fowler-Nordheim equation successfully describes observed current-voltage relations for reasonable values of the semiconductor parameters of the system. Fatigue of

An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...

Igor Stolichnov

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Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels

Tunneling conduction in virgin and fatigued states of PZT films

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Space-charge influenced injection model for conduction in Pb(ZrxTi1-x)O-3 thin films

Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Kinetics of polarization reversal in ferroelectric films: role of domain nucleation and domain wall motion

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Ferroelectric Gate on AlGaN/GaN Heterostructures

Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

Ferroelectric transistors with improved characteristics at high temperature

Unusual size effect on the polarization patterns in micron-size Pb(Zr,Ti)O-3 film capacitors

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Antiferroelectric Multilayers Devices: a Platform for Energy and Information Storage

Cold-field-emission test of the fatigued state of Pb(ZrxTi1-x)O-3 films

Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films