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Igor Stolichnov

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Related publications (68)

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Paul Muralt, Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

2019

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Enrico Colla, Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

IEEE2018

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Igor Stolichnov, Mihai Adrian Ionescu

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

2017

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Igor Stolichnov, Mihai Adrian Ionescu, Andreas Schueler, Olivier Martin, Arnaud Magrez, Chen Yan, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva, Anna Krammer

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Tomas Sluka, Petr Yudin, Ludwig Feigl, Xiankui Wei, Arnaud Robert André Crassous, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Non-volatile polarization switch of magnetic domain wall velocity

Nava Setter, Igor Stolichnov, Zhouji Huang

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferro ...

Amer Inst Physics2015

Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films

Nava Setter, Enrico Colla, Igor Stolichnov, Monika Iwanowska

Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive ...

Amer Inst Physics2014

Controlled stripes of ultrafine ferroelectric domains

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Silviu Cosmin Sandu, Tomas Sluka, Mahamudu Mtebwa, Petr Yudin, Ludwig Feigl, Xiankui Wei, Konstantin Shapovalov

In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

Nature Publishing Group2014

Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Nava Setter, Igor Stolichnov, Zhouji Huang

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows ...

American Institute of Physics2013

Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Charge compensation at the interface is a fundamental phenomenon determining the operation conditions of thin-film devices incorporating ferroelectrics. The underlying mechanisms have been thoroughly addressed in perovskite ferroelectrics where the charge ...

American Institute of Physics2012

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Nava Setter, Igor Stolichnov, Evgeny Mikheev, Zhouji Huang

We demonstrate charge-mediated and non-volatile control of anisotropic magnetoresistance (AMR) in a dilute magnetic semiconductor (Ga,Mn)(As, P) with an integrated polymer ferroelectric gate. The persistent electric field associated with switchable polariz ...

American Institute of Physics2012

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