Publications by Igor Stolichnov

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Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are controlled by local injection of charge into the interfacial layers of the ferroelectric film. In the experimental part of this work, we show that the entrapped charge relaxation can be enhanced by introducing a thin RuO2 layer into the top interface of the Pt/

Role of Pt and SRO electrodes in polarization fatigue of PLZT film ferroelectric capacitors is studied. We show that asymmetrical Pt/SRO/PLZT/Pt structure exhibits unusual dependence of the endurance of switching polarization on the driving ac electric field amplitude. Specifically, for high ac electric field amplitude it shows a good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of conventional Pt/PLZT/Pt

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

We demonstrate charge-mediated and non-volatile control of anisotropic magnetoresistance (AMR) in a dilute magnetic semiconductor (Ga,Mn)(As, P) with an integrated polymer ferroelectric gate. The persistent electric field associated with switchable polariz ...

We propose and experimentally demonstrate topgated complementary n- and p-type black phosphorous FETs by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 layer. Pre-patterned electrodes offer the possibility of reducing the exposure time of exfoliated flakes to oxidant agents with respect to top-contacted devices and maximize the accessible area for sensing applications. The devices are realized by exfoliating multilayer black phosphorous flakes on top of pre-patterned embedded so

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

A unified approach for analysis of polarization fatigue and size effects on ferroelectric switching in relationship with injection and entrapment of charge at the interfacial layer of the ferroelectric film is developed. The proposed model suggests that an enhancement of the entrapped charge relaxation at the interfaces has a positive impact on both the polarization fatigue and size effects. This concept is implemented experimentally by introducing a thin conductive oxide (RuO2) layer into the top interface

A diol-based sol-gel method was used to prepare UV sensitive precursor solutions in the processing of modified lead titanate ferroelectric thin films. Films were deposited by spin-coating onto platinized Si-based substrates. A preferential orientation was promoted by appropriated choice of the substrate and multiple deposition and crystallization steps. Processing under UV radiation was carried out in a novel RTP equipment including an arrangement of high intensity UV excimer lamps. To obtain the desi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

This work presents a CMOS-compatible multilayer platform integrating energy storage and tunable varactor functionality within a compact system. By co-integrating antiferroelectric (AFE) and dielectric (DE) layers, the design achieves tunability up to 28%, ...

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

The direct observation of blocked polarization domains at the electrode-ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile memories but have not been directly observed so far due to the required upper metal electrode which impedes the direct access to the surface of the ferroelectric film. This problem has been solved by using low temperature melting metal as removable top el

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-rang ...

The study of polarization reversal in (Pb,La)(Zr,Ti)O-3 thin films reveals a drastic difference between the switching kinetics observed at RT and at low temperature of 40 K. In particular, at 40 K, the switching kinetics in studied films is similar to that observed in ferroelectric single crystals. Additionally, the films with completely different switching behavior at RT show very similar switching properties at 40 K. The data analysis suggests that the polarization reversal at RT is limited mainly by nucl

The reduction in switchable polarization of ferroelectric thin films due to electrical stress (polarization fatigue) is a major problem in ferroelectric nonvolatile memories. There is a large body of available experimental data and a number of existing models which address this issue, however the origin of this phenomena is still not properly understood. This work synthesizes the current experimental data, models, and approaches in order to draw conclusions on the relative importance of different macro- and

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

Igor Stolichnov

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Long-term retention in organic ferroelectric-graphene memories

Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Degradation of asymmetrical Pt/SRO/PLZT/Pt capacitors: Role of Pt and oxide electrodes

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

Resistive Coupled VO2 Oscillators for Image Recognition

Charge relaxation at the interfaces of low-voltage ferroelectric film capacitors: Fatigue endurance and size effects

Ca and La-modified lead titanate sol-gel thin films by UV-assisted processing for piezoelectric sensors

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films

Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”