Home

Person

Igor Stolichnov

This person has left EPFL

About
Privacy
Disclaimer

Graph Chatbot

Related publications (68)

Page 3 of 4

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi, Eamon Patrick O'Connor

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Giovanni Antonio Salvatore

A polymer based Ferroelectric gate FET at 1T non-volatile memory on bulk silicon is demonstrated. Spin-coated 40 nm and 100 nm P(VDF-TrFE) (70%-30%) ultra-thin films have been integrated onto 10 nm SiO₂ layer as gate dielectric into a conventional silicon ...

2008

Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films

Nava Setter, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109 degrees domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive ...

Amer Inst Physics2014

Atomic-Scale Characterization of 180° Conductive Domain Walls in PbZr0.1Ti0.9O3

Igor Stolichnov, Felix Risch

Conductive domain walls (DWs) in ferroic materials have emerged as promising candidates for applications in nanoelectronics due to their unique properties such as high conductivity and nonvolatility. In this study, we investigate the atomic structure and c ...

2024

Graphene-enhanced ferroelectric domain wall high-output memristor

Mihai Adrian Ionescu, Igor Stolichnov, Sadegh Kamaei Bahmaei, Ali Gilani, Felix Risch

Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel information processing concepts. Among these materials, conductive domain walls in ferroics are especi ...

AIP American Institute of Physics2024

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Magnetic domain wall propagation under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

Control of magnetic domain walls (DWs) and their propagation is among the most promising development directions for future information-storage devices. The well-established tools for such manipulation are the spin-torque transfer from electrical currents a ...

American Physical Society2012

Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]

Alexander Tagantsev, Nava Setter, Dragan Damjanovic, Igor Stolichnov

2009

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

Andrea Iaconeta, Mihai Adrian Ionescu, Andras Kis, Igor Stolichnov, Anna Varini, Cyrille Masserey, Vanessa Conti, Riccardo Chiesa

This paper presents a novel nanoscale platform based on vanadium dioxide (VO2) two-terminal devices shaped like nanowires (NWs). For the first time we report CMOS compatible VO2 two-terminal devices with little-to-no stochasticity in the absence of electro ...

IEEE2025

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Nava Setter, Igor Stolichnov, Marco Cantoni

The microstructure of ferroelectric Cd1−xZnxTe (CZT) thin films with x ≈ 0.04 grown by molecular beam epitaxy has been studied by means of cross sectional high-resolution transmission electron microscopy (HREM). High- density {1 1 1} lamellar twins are fou ...

2009

Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and t ...

Amer Inst Physics, 2 Huntington Quadrangle, Ste 1No1 D, Melville, Ny 11747-4501 Usa2009

Ferroelectric control of ferromagnetism in diluted magnetic semiconductors

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Alexander Tagantsev, Nava Setter, Igor Stolichnov, Tomas Sluka, Enrico Colla, Ludwig Feigl, Petr Yudin, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Non-volatile polarization switch of magnetic domain wall velocity

Nava Setter, Igor Stolichnov, Zhouji Huang

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferro ...

Amer Inst Physics2015

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

2017

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Nava Setter, Igor Stolichnov, Enrico Colla

2006

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Sebastian Riester

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor

Igor Stolichnov, Felix Risch

Domain-wall electronics based on the tunable transport in reconfigurable ferroic domain interfaces offer a promising platform for in-memory computing approaches and reprogrammable neuromorphic circuits. While conductive domain walls have been discovered in ...

2025