Publication

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Nava Setter, Igor Stolichnov
2007
Conference Papers

Abstract

Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at sub-micron scale. One of the fundamental obstacles impeding implementation of such devices is associated with the unfavorable relation between the dielectric constants of the classical oxide ferroelectrics and semiconductors. In the present work we demonstrate a way to alleviate this problem by using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor CdZnTe films is proven and studied using modified piezo-force scanning probe microscopy. Then a rewritable field effect device is demonstrated by local poling of the CdZnTe layer of a CdZnTe/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas.

Official source

https://infoscience.epfl.ch/entities/publication/00a4db3b-5c44-4159-94fd-79642e89752b

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Nava Setter, Igor Stolichnov
2007
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/00a4db3b-5c44-4159-94fd-79642e89752b

About this result

Related concepts (32)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).

Non-volatile random-access memory

Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power. Read-only memory devices can be used to store system firmware in embedded systems such as an automotive ignition system control or home appliance.

Related publications (32)

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Chat with Graph Search

Enhanced breakdown performance on GaN vertical diodes through intrinsic polarization fields and extrinsic p-oxides

Intelligent Tactile Perception Revolution: Innovations in Flexible FET‐Based Tactile Sensors for Next‐Gen Human–Machine Interfaces

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors