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Igor Stolichnov

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Related publications (68)

Page 1 of 4

Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla

The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...

2005

Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films

Nava Setter, Igor Stolichnov

Ultrathin films of the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] have recently attracted intensive research interest due to their potential applications in emerging organic devices. As special geometry confinement syst ...

2011

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Riyaz Mohammed Abdul Khadar, Matteo Cavalieri, Andrei Müller, Teodor Rosca, Fatemeh Qaderi Rahaqi

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

VO2 oscillators coupling for Neuromorphic Computation

Mihai Adrian Ionescu, Igor Stolichnov, Kirsten Emilie Moselund, Elisabetta Corti

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

IEEE2019

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unam ...

AIP American Institute of Physics2009

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

Mihai Adrian Ionescu, Igor Stolichnov

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy ...

IEEE2018

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Alexander Tagantsev, Nava Setter, Igor Stolichnov

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

American Physical Society2012

Controlled stripes of ultrafine ferroelectric domains

Alexander Tagantsev, Nava Setter, Igor Stolichnov, Silviu Cosmin Sandu, Tomas Sluka, Ludwig Feigl, Petr Yudin, Konstantin Shapovalov, Mahamudu Mtebwa

In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

Nature Publishing Group2014

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Emeric Emmanuel Hartmann, Mihai Adrian Ionescu, Igor Stolichnov, Niccolò Martinolli, Anna Varini, Ehsan Ansari

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

AMER CHEMICAL SOC2025

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

IEEE2018

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011