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Jean-Michel Sallese

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Related publications (155)

Analytic modelling of passive microfluidic mixers

Christophe Lallement, Jean-Michel Sallese

This paper deals with a new analytical model for microfluidic passive mixers. Two common approaches already exist for such a purpose. On the one hand, the resolution of the advection-diffusion-reaction equation (ADRE) is the first one and the closest to ph ...

AMER INST MATHEMATICAL SCIENCES-AIMS2022

Charge-based modeling of field effect transistors, Make it easy

Jean-Michel Sallese

In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate ...

IEEE2021

Compact Analytical Model of Nanowire Junctionless ISFET

Jean-Michel Sallese

In this work, we present a simple compact model for junctionless ion-sensitive FETs (JL ISFET) operating in depletion. The sensitivity dependence on nanowire physical and geometrical parameters are discussed as guidelines for the device optimization. The m ...

IEEE2021

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Jean-Michel Sallese, Ashkhen Yesayan

The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in ...

PLEIADES PUBLISHING INC2021

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...

2020

High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

Marco Mattavelli, Jean-Michel Sallese, Catherine Dehollain, Diego Ruben Barrettino

In this work a high precision capacitive moisture sensor for polymers was designed and fabricated. The device is part of a compact, fast, and economic moisture analyzer capable of reaching a similar precision than commercial moisture analyzers based on the ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Jean-Michel Sallese, Mihai Adrian Ionescu, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of the thickness ...

2020

Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

Matthias Bucher, Jean-Michel Sallese, Farzan Jazaeri

In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Transcapacitances in EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

New architecture for the analog front-end of Medipix4

Jean-Michel Sallese, Adil Koukab, Viros Sriskaran

The Medipix4 chip is the latest member of the family of Medipix pixel detector readout chips aimed at high rate spectroscopic X-ray imaging. Unlike its predecessors, it will be possible to tile the chip on all 4 sides permitting seamless large area coverag ...

ELSEVIER2020

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electro ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Compact Model for Continuous Microfluidic Mixer

Christophe Lallement, Jean-Michel Sallese

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

IEEE2020

A BEAM PROFILE MONITOR FOR HIGH ENERGY PROTON BEAMS USING MICROFABRICATION TECHNIQUES

Didier Bouvet, Jean-Michel Sallese

In High Energy Physics (HEP) experiments it is a common practice to expose electronic components and systems to particle beams, in order to assess their level of radiation tolerance and reliability when operating in a radiation environment. One of the faci ...

JACoW Publishing2020

FCC-ee: The Lepton Collider: Future Circular Collider Conceptual Design Report Volume 2

Manuel Bauer, Luca Rossi, François Robert, Jean-Michel Sallese, Pierluigi Bruzzone, Mikhail Chapochnikov, Bernhard Auchmann, Alban Sublet, Mathias Oleg Knecht, Yu Bai, Jorg Wenninger, Tatiana Pieloni, Leonid Rivkin, Hua Zhang, Xavier Buffat, Andrea Wulzer, Martin Vogel, Sandra Aumon, Alexandra Sarabando de Carvalho, Giuseppe Montenero, Marco Drewes, Doohyun Kim, Frank Zimmermann, José Luis Abelleira Fernández, Alexej Grudiev, Fabio Avino, Massimo Giovannozzi, Patrik Gonçalves Jorge, Francesco Cerutti, Javier Barranco Garcia, Roberto Contino, Rudiger Schmidt, Claudia Tambasco, Michael Schenk, Yi Zhang, Georgi Gorine, Agnieszka Chmielinska, Luca Bottura, Lotta Maria Mether, Mithlesh Kumar, Vincenzo D'Auria, , , , , , , ,

Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

Christophe Lallement, Jean-Michel Sallese

The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance a ...

2019

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jean-Michel Sallese, Seyed Armin Tajalli, Farzan Jazaeri, Arnout Lodewijk M Beckers

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Transient current technique for charged traps detection in silicon bonded interfaces

Didier Bouvet, Jean-Michel Sallese, Alessandro Mapelli

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, microelectromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabri ...

2019

HE-LHC: The High-Energy Large Hadron Collider Future Circular Collider Conceptual Design Report Volume 4

Manuel Bauer, Luca Rossi, Thomas Rizzo, François Robert, Jean-Michel Sallese, Pierluigi Bruzzone, Mikhail Chapochnikov, Bernhard Auchmann, Jeffrey Alan Hubbell, Alban Sublet, Mathias Oleg Knecht, Yu Bai, Jorg Wenninger, Marc-Olivier Sauvain, Tatiana Pieloni, Leonid Rivkin, Hua Zhang, Xavier Buffat, Mingkui Wang, Andrea Wulzer, Martin Vogel, Sandra Aumon, Alexandra Sarabando de Carvalho, Giuseppe Montenero, Marco Drewes, Giovanni Migliorati, Florian Patrick Marie Daniel De la Barre De Nanteuil, Doohyun Kim, Frank Zimmermann, José Luis Abelleira Fernández, Alexej Grudiev, Fabio Avino, Massimo Giovannozzi, Patrik Gonçalves Jorge, Francesco Cerutti, Javier Barranco Garcia, Roberto Contino, Eva Maria Rodriguez Franco, Rudiger Schmidt, Claudia Tambasco, , , , , , , , , , , , , , , , ,

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Page 2 of 8

Léon Van Riesen-Haupt

In response to the 2013 Update of the European Strategy for Particle Physics, the Future Circular Collider (FCC) study was launched, as an international collaboration hosted by CERN. This study covers a highest-luminosity high-energy lepton collider (FCC-e ...

2019

Michael Schenk

Yi Zhang

Georgi Gorine

Agnieszka Chmielinska

Lorena Gonçalves de Alcântara e Freitas Krikler

Léon Van Riesen-Haupt

In response to the 2013 Update of the European Strategy for Particle Physics (EPPSU), the Future Circular Collider (FCC) study was launched as a world-wide international collaboration hosted by CERN. The FCC study covered an energy-frontier hadron collider ...

2019