Publication

Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

Maher Kayal, Jean-Michel Sallese
2008
Journal Articles

Abstract

In this paper, we present a new method to measure light intensity in a floating body partially depleted SOI MOSFET. The photo-generated charge density in the MOSFET is converted into a charge pumping frequency needed to maintain the drain current at a constant value. This new approach contrasts with conventional techniques that rely on an accurate drain current evaluation. According to our measurements, flux densities as low as 2 mW/m2 were obtained using a regular SOI MOSFET, thus confirming the potentials of this approach. © 2007 Elsevier Ltd. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/656c934d-5da2-4816-b38a-c579ce32238e

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Transient charge pumping as an efficient technique to measure low light intensity with PD SOI MOSFET

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